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Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s

Schukfeh, Muhammed Ihab ; Storm, Kristian LU ; Mahmoud, Ahmed ; Sondergaard, Roar R. ; Szwajca, Anna ; Hansen, Allan ; Hinze, Peter ; Weimann, Thomas ; Fahlvik Svensson, Sofia LU and Bora, Achyut , et al. (2013) In ACS Nano 7(5). p.4111-4118
Abstract
We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowires, heterostructure, InAs, molecular electronics, oligo(phenylene, vinylene)
in
ACS Nano
volume
7
issue
5
pages
4111 - 4118
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000319856300048
  • scopus:84878270049
ISSN
1936-086X
DOI
10.1021/nn400380g
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
747a5690-bcb2-4433-abf6-d2096c493930 (old id 3927382)
date added to LUP
2016-04-01 10:12:16
date last changed
2023-09-13 20:22:39
@article{747a5690-bcb2-4433-abf6-d2096c493930,
  abstract     = {{We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.}},
  author       = {{Schukfeh, Muhammed Ihab and Storm, Kristian and Mahmoud, Ahmed and Sondergaard, Roar R. and Szwajca, Anna and Hansen, Allan and Hinze, Peter and Weimann, Thomas and Fahlvik Svensson, Sofia and Bora, Achyut and Dick Thelander, Kimberly and Thelander, Claes and Krebs, Frederik C. and Lugli, Paolo and Samuelson, Lars and Tornow, Marc}},
  issn         = {{1936-086X}},
  keywords     = {{nanowires; heterostructure; InAs; molecular electronics; oligo(phenylene; vinylene)}},
  language     = {{eng}},
  number       = {{5}},
  pages        = {{4111--4118}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nano}},
  title        = {{Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s}},
  url          = {{http://dx.doi.org/10.1021/nn400380g}},
  doi          = {{10.1021/nn400380g}},
  volume       = {{7}},
  year         = {{2013}},
}