Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(2013) In ACS Nano 7(5). p.4111-4118- Abstract
- We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3927382
- author
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanowires, heterostructure, InAs, molecular electronics, oligo(phenylene, vinylene)
- in
- ACS Nano
- volume
- 7
- issue
- 5
- pages
- 4111 - 4118
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000319856300048
- scopus:84878270049
- ISSN
- 1936-086X
- DOI
- 10.1021/nn400380g
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 747a5690-bcb2-4433-abf6-d2096c493930 (old id 3927382)
- date added to LUP
- 2016-04-01 10:12:16
- date last changed
- 2023-09-13 20:22:39
@article{747a5690-bcb2-4433-abf6-d2096c493930, abstract = {{We have investigated the electronic transport through 3 mu m long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 mu A at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.}}, author = {{Schukfeh, Muhammed Ihab and Storm, Kristian and Mahmoud, Ahmed and Sondergaard, Roar R. and Szwajca, Anna and Hansen, Allan and Hinze, Peter and Weimann, Thomas and Fahlvik Svensson, Sofia and Bora, Achyut and Dick Thelander, Kimberly and Thelander, Claes and Krebs, Frederik C. and Lugli, Paolo and Samuelson, Lars and Tornow, Marc}}, issn = {{1936-086X}}, keywords = {{nanowires; heterostructure; InAs; molecular electronics; oligo(phenylene; vinylene)}}, language = {{eng}}, number = {{5}}, pages = {{4111--4118}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Nano}}, title = {{Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s}}, url = {{http://dx.doi.org/10.1021/nn400380g}}, doi = {{10.1021/nn400380g}}, volume = {{7}}, year = {{2013}}, }