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Au-free epitaxial growth of InAs nanowires

Mandl, Bernhard ; Stangl, Julian ; Mårtensson, Thomas LU ; Mikkelsen, Anders LU ; Bolinsson, Jessica LU ; Karlsson, Lisa LU ; Bauer, Gunther ; Samuelson, Lars LU and Seifert, Werner LU (2006) In Nano Letters 6(8). p.1817-1821
Abstract
III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
6
issue
8
pages
1817 - 1821
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:16895379
  • wos:000239623900042
  • scopus:33748291684
ISSN
1530-6992
DOI
10.1021/nl060452v
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Synchrotron Radiation Research (011013009), Polymer and Materials Chemistry (LTH) (011001041)
id
756243e6-ee6c-494e-9b30-d56e3871ecc7 (old id 398319)
date added to LUP
2016-04-01 16:04:52
date last changed
2022-03-14 21:52:54
@article{756243e6-ee6c-494e-9b30-d56e3871ecc7,
  abstract     = {{III-V nanowires have been fabricated by metal-organic vapor-phase epitaxy without using Au or other metal particles as a catalyst. Instead, prior to growth, a thin SiOx layer is deposited on the substrates. Wires form on various III-V substrates as well as on Si. They are nontapered in thickness and exhibit a hexagonal cross-section. From high-resolution X-ray diffraction, the epitaxial relation between wires and substrates is demonstrated and their crystal structure is determined.}},
  author       = {{Mandl, Bernhard and Stangl, Julian and Mårtensson, Thomas and Mikkelsen, Anders and Bolinsson, Jessica and Karlsson, Lisa and Bauer, Gunther and Samuelson, Lars and Seifert, Werner}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{8}},
  pages        = {{1817--1821}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Au-free epitaxial growth of InAs nanowires}},
  url          = {{http://dx.doi.org/10.1021/nl060452v}},
  doi          = {{10.1021/nl060452v}},
  volume       = {{6}},
  year         = {{2006}},
}