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III-V Nanowire MOSFETs in RF-Applications

Wernersson, Lars-Erik LU (2014) Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society 64(17). p.69-73
Abstract
InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
ECS Transactions
volume
64
issue
17
pages
69 - 73
publisher
Electrochemical Society
conference name
Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society
conference location
Cancun, Mexico
conference dates
2014-10-05 - 2014-10-09
external identifiers
  • wos:000356860500009
  • scopus:84921287756
ISSN
1938-5862
1938-6737
DOI
10.1149/06417.0069ecst
language
English
LU publication?
yes
id
625838f8-8598-4ded-acb6-af69cddaa61a (old id 7596508)
date added to LUP
2016-04-01 10:19:43
date last changed
2025-01-14 12:00:16
@inproceedings{625838f8-8598-4ded-acb6-af69cddaa61a,
  abstract     = {{InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.}},
  author       = {{Wernersson, Lars-Erik}},
  booktitle    = {{ECS Transactions}},
  issn         = {{1938-5862}},
  language     = {{eng}},
  number       = {{17}},
  pages        = {{69--73}},
  publisher    = {{Electrochemical Society}},
  title        = {{III-V Nanowire MOSFETs in RF-Applications}},
  url          = {{http://dx.doi.org/10.1149/06417.0069ecst}},
  doi          = {{10.1149/06417.0069ecst}},
  volume       = {{64}},
  year         = {{2014}},
}