Advanced

III-V Nanowire MOSFETs in RF-Applications

Wernersson, Lars-Erik LU (2014) Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society In ECS Transactions 64(17). p.69-73
Abstract
InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
in
ECS Transactions
volume
64
issue
17
pages
69 - 73
publisher
Electrochemical Society
conference name
Symposium on State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS) held during the 226th Meeting of the Electrochemical-Society
external identifiers
  • wos:000356860500009
  • scopus:84921287756
ISSN
1938-5862
1938-6737
DOI
10.1149/06417.0069ecst
language
English
LU publication?
yes
id
625838f8-8598-4ded-acb6-af69cddaa61a (old id 7596508)
date added to LUP
2015-07-23 10:09:01
date last changed
2017-01-01 03:29:10
@inproceedings{625838f8-8598-4ded-acb6-af69cddaa61a,
  abstract     = {InAs nanowires have been used to fabricate high-performance MOSFETs that have been integrated into small-scale RF-circuits. We describe the strategy for the design of the transistor architecture and present data for the DC and high-frequency performance. Studies of the 1/f-noise show competitive normalized noise spectral density although it suggests the presence of defects within the high-k film that affect the number of carriers in the transistor channel. These transistors have been used in single-balanced down-conversion mixers operating up to a few GHz.},
  author       = {Wernersson, Lars-Erik},
  booktitle    = {ECS Transactions},
  issn         = {1938-5862},
  language     = {eng},
  number       = {17},
  pages        = {69--73},
  publisher    = {Electrochemical Society},
  title        = {III-V Nanowire MOSFETs in RF-Applications},
  url          = {http://dx.doi.org/10.1149/06417.0069ecst},
  volume       = {64},
  year         = {2014},
}