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Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

Lawniczak-Jablonska, K. ; Libera, J. ; Wolska, A. ; Klepka, M. T. ; Dluzewski, P. ; Bak-Misiuk, J. ; Dynowska, E. ; Romanowski, P. ; Domagala, J. Z. and Sadowski, Janusz LU , et al. (2011) In Physica Status Solidi. B: Basic Research 248(7). p.1609-1614
Abstract
Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
granular material, room temperature ferromagnetism, spintronics
in
Physica Status Solidi. B: Basic Research
volume
248
issue
7
pages
1609 - 1614
publisher
John Wiley & Sons Inc.
external identifiers
  • wos:000293033000013
  • scopus:79959627110
ISSN
0370-1972
DOI
10.1002/pssb.201001187
language
English
LU publication?
yes
id
765ae053-3c6a-47d0-b3b2-b52bc5d69b07 (old id 2088474)
date added to LUP
2016-04-01 14:10:56
date last changed
2022-03-31 14:53:41
@article{765ae053-3c6a-47d0-b3b2-b52bc5d69b07,
  abstract     = {{Granular GaAs:(Mn,Ga)As films were prepared by annealing the Ga0.92Mn0.08As/GaAs layer grown by the MBE method at low temperature. The annealing was performed at 500 or 600 degrees C. It is commonly accepted that this processing should result in formation of cubic zinc blende or hexagonal MnAs inclusions depending on the temperature. We demonstrate that such a priory assumption is not justified. The kind of formed inclusions depends not only on the annealing temperature but also on the number of defects and Mn atoms in the substitutional and interstitial positions in as grown sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
  author       = {{Lawniczak-Jablonska, K. and Libera, J. and Wolska, A. and Klepka, M. T. and Dluzewski, P. and Bak-Misiuk, J. and Dynowska, E. and Romanowski, P. and Domagala, J. Z. and Sadowski, Janusz and Barcz, A. and Wasik, D. and Twardowski, A. and Kwiatkowski, A.}},
  issn         = {{0370-1972}},
  keywords     = {{granular material; room temperature ferromagnetism; spintronics}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{1609--1614}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Physica Status Solidi. B: Basic Research}},
  title        = {{Structural and magnetic properties of GaAs:(Mn,Ga)As granular layers}},
  url          = {{http://dx.doi.org/10.1002/pssb.201001187}},
  doi          = {{10.1002/pssb.201001187}},
  volume       = {{248}},
  year         = {{2011}},
}