An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI
(2022) 2022 IEEE Nordic Circuits and Systems Conference (NorCAS)- Abstract
- A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output... (More)
- A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output power (P sat ) of up to +24.4 dBm with up to 45% power-added efficiency, which is compliant with the current 3GPP standard for NB-IoT and LTE-M. The maximum power-gain varies between 30.7 dB and 29.2 dB over the whole frequency range. The PA core circuit occupies 0.32 mm 2 of silicon area, of which 0.2 mm 2 is occupied by the low loss balun. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7734c30c-27b4-4ad7-89ce-3bf606c1bafd
- author
- Behmanesh, Baktash LU ; Rodrigues, Joachim LU and Sjöland, Henrik LU
- organization
- publishing date
- 2022-11-08
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Power Amplifiers, NB-IoT, LTE Cat-M1, IoT, CMOS integrated circuits, FDSOI
- host publication
- 2022 IEEE Nordic Circuits and Systems Conference (NorCAS)
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2022 IEEE Nordic Circuits and Systems Conference (NorCAS)
- conference location
- Oslo, Norway
- conference dates
- 2022-10-25 - 2022-10-26
- external identifiers
-
- scopus:85142451140
- ISBN
- 979-8-3503-4551-3
- 979-8-3503-4550-6
- DOI
- 10.1109/NorCAS57515.2022.9934709
- language
- English
- LU publication?
- yes
- id
- 7734c30c-27b4-4ad7-89ce-3bf606c1bafd
- date added to LUP
- 2022-11-09 10:30:57
- date last changed
- 2024-04-17 02:49:12
@inproceedings{7734c30c-27b4-4ad7-89ce-3bf606c1bafd, abstract = {{A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output power (P sat ) of up to +24.4 dBm with up to 45% power-added efficiency, which is compliant with the current 3GPP standard for NB-IoT and LTE-M. The maximum power-gain varies between 30.7 dB and 29.2 dB over the whole frequency range. The PA core circuit occupies 0.32 mm 2 of silicon area, of which 0.2 mm 2 is occupied by the low loss balun.}}, author = {{Behmanesh, Baktash and Rodrigues, Joachim and Sjöland, Henrik}}, booktitle = {{2022 IEEE Nordic Circuits and Systems Conference (NorCAS)}}, isbn = {{979-8-3503-4551-3}}, keywords = {{Power Amplifiers, NB-IoT, LTE Cat-M1, IoT, CMOS integrated circuits, FDSOI}}, language = {{eng}}, month = {{11}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI}}, url = {{http://dx.doi.org/10.1109/NorCAS57515.2022.9934709}}, doi = {{10.1109/NorCAS57515.2022.9934709}}, year = {{2022}}, }