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An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI

Behmanesh, Baktash LU orcid ; Rodrigues, Joachim LU and Sjöland, Henrik LU orcid (2022) 2022 IEEE Nordic Circuits and Systems Conference (NorCAS)
Abstract
A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output... (More)
A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output power (P sat ) of up to +24.4 dBm with up to 45% power-added efficiency, which is compliant with the current 3GPP standard for NB-IoT and LTE-M. The maximum power-gain varies between 30.7 dB and 29.2 dB over the whole frequency range. The PA core circuit occupies 0.32 mm 2 of silicon area, of which 0.2 mm 2 is occupied by the low loss balun. (Less)
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Power Amplifiers, NB-IoT, LTE Cat-M1, IoT, CMOS integrated circuits, FDSOI
host publication
2022 IEEE Nordic Circuits and Systems Conference (NorCAS)
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
2022 IEEE Nordic Circuits and Systems Conference (NorCAS)
conference location
Oslo, Norway
conference dates
2022-10-25 - 2022-10-26
external identifiers
  • scopus:85142451140
ISBN
979-8-3503-4551-3
979-8-3503-4550-6
DOI
10.1109/NorCAS57515.2022.9934709
language
English
LU publication?
yes
id
7734c30c-27b4-4ad7-89ce-3bf606c1bafd
date added to LUP
2022-11-09 10:30:57
date last changed
2024-04-17 02:49:12
@inproceedings{7734c30c-27b4-4ad7-89ce-3bf606c1bafd,
  abstract     = {{A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output power (P sat ) of up to +24.4 dBm with up to 45% power-added efficiency, which is compliant with the current 3GPP standard for NB-IoT and LTE-M. The maximum power-gain varies between 30.7 dB and 29.2 dB over the whole frequency range. The PA core circuit occupies 0.32 mm 2 of silicon area, of which 0.2 mm 2 is occupied by the low loss balun.}},
  author       = {{Behmanesh, Baktash and Rodrigues, Joachim and Sjöland, Henrik}},
  booktitle    = {{2022 IEEE Nordic Circuits and Systems Conference (NorCAS)}},
  isbn         = {{979-8-3503-4551-3}},
  keywords     = {{Power Amplifiers, NB-IoT, LTE Cat-M1, IoT, CMOS integrated circuits, FDSOI}},
  language     = {{eng}},
  month        = {{11}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI}},
  url          = {{http://dx.doi.org/10.1109/NorCAS57515.2022.9934709}},
  doi          = {{10.1109/NorCAS57515.2022.9934709}},
  year         = {{2022}},
}