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Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires

Troian, Andrea LU ; Otnes, Gaute LU ; Zeng, Xulu LU ; Chayanun, Lert LU ; Dagyte, Vilgaile LU ; Hammarberg, Susanna LU ; Salomon, Damien; Timm, Rainer LU ; Mikkelsen, Anders LU and Borgström, Magnus T. LU , et al. (2018) In Nano Letters p.6461-6468
Abstract

The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device sizes it becomes increasingly difficult to quantify doping with sufficient sensitivity and spatial resolution. Here, we demonstrate how X-ray fluorescence mapping with a nanofocused beam, nano-XRF, can quantify Zn doping within in situ doped III-V nanowires, by using large area detectors and high-efficiency focusing optics. The spatial resolution is defined by the focus size to 50 nm. The detection limit of 7 ppm (2.8 × 1017 cm-3), corresponding to about 150 Zn atoms in the probed volume, is bound by a background signal. In solar cell InP nanowires with a... (More)

The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device sizes it becomes increasingly difficult to quantify doping with sufficient sensitivity and spatial resolution. Here, we demonstrate how X-ray fluorescence mapping with a nanofocused beam, nano-XRF, can quantify Zn doping within in situ doped III-V nanowires, by using large area detectors and high-efficiency focusing optics. The spatial resolution is defined by the focus size to 50 nm. The detection limit of 7 ppm (2.8 × 1017 cm-3), corresponding to about 150 Zn atoms in the probed volume, is bound by a background signal. In solar cell InP nanowires with a p-i-n doping profile, we use nano-XRF to observe an unintentional Zn doping of 5 × 1017 cm-3 in the middle segment. We investigated the dynamics of in situ Zn doping in a dedicated multisegment nanowire, revealing significantly sharper gradients after turning the Zn source off than after turning the source on. Nano-XRF could be used for quantitative mapping of a wide range of dopants in many types of nanostructures.

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publication status
published
subject
keywords
doping, III-V, InGaP, InP, nano-XRF, Nanowire
in
Nano Letters
pages
6461 - 6468
publisher
The American Chemical Society
external identifiers
  • scopus:85053604229
ISSN
1530-6984
DOI
10.1021/acs.nanolett.8b02957
language
English
LU publication?
yes
id
7740b9c7-338f-470f-b974-2f77458046d3
date added to LUP
2018-10-11 08:39:43
date last changed
2019-05-21 04:12:48
@article{7740b9c7-338f-470f-b974-2f77458046d3,
  abstract     = {<p>The properties of semiconductors can be controlled using doping, making it essential for electronic and optoelectronic devices. However, with shrinking device sizes it becomes increasingly difficult to quantify doping with sufficient sensitivity and spatial resolution. Here, we demonstrate how X-ray fluorescence mapping with a nanofocused beam, nano-XRF, can quantify Zn doping within in situ doped III-V nanowires, by using large area detectors and high-efficiency focusing optics. The spatial resolution is defined by the focus size to 50 nm. The detection limit of 7 ppm (2.8 × 10<sup>17</sup> cm<sup>-3</sup>), corresponding to about 150 Zn atoms in the probed volume, is bound by a background signal. In solar cell InP nanowires with a p-i-n doping profile, we use nano-XRF to observe an unintentional Zn doping of 5 × 10<sup>17</sup> cm<sup>-3</sup> in the middle segment. We investigated the dynamics of in situ Zn doping in a dedicated multisegment nanowire, revealing significantly sharper gradients after turning the Zn source off than after turning the source on. Nano-XRF could be used for quantitative mapping of a wide range of dopants in many types of nanostructures.</p>},
  author       = {Troian, Andrea and Otnes, Gaute and Zeng, Xulu and Chayanun, Lert and Dagyte, Vilgaile and Hammarberg, Susanna and Salomon, Damien and Timm, Rainer and Mikkelsen, Anders and Borgström, Magnus T. and Wallentin, Jesper},
  issn         = {1530-6984},
  keyword      = {doping,III-V,InGaP,InP,nano-XRF,Nanowire},
  language     = {eng},
  month        = {09},
  pages        = {6461--6468},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Nanobeam X-ray Fluorescence Dopant Mapping Reveals Dynamics of in Situ Zn-Doping in Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.8b02957},
  year         = {2018},
}