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Structural investigation of GaInP nanowires using X-ray diffraction

Kriegner, D. ; Persson, J. M. ; Etzelstorfer, T. ; Jacobsson, Daniel LU ; Wallentin, Jesper LU ; Wagner, J. B. ; Deppert, Knut LU ; Borgström, Magnus LU and Stangl, J. (2013) In Thin Solid Films 543. p.100-105
Abstract
In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within... (More)
In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowires, X-ray diffraction, III-V semiconductors
in
Thin Solid Films
volume
543
pages
100 - 105
publisher
Elsevier
external identifiers
  • wos:000324049500023
  • scopus:84883192097
ISSN
0040-6090
DOI
10.1016/j.tsf.2013.02.112
language
English
LU publication?
yes
id
77edab9d-c96f-482d-9461-2102adc51c37 (old id 4106380)
date added to LUP
2016-04-01 13:43:01
date last changed
2020-01-12 13:26:19
@article{77edab9d-c96f-482d-9461-2102adc51c37,
  abstract     = {In this work the structure of ternary GaxIn1-xP nanowires is investigated with respect to the chemical composition and homogeneity. The nanowires were grown by metal-organic vapor-phase epitaxy. For the investigation of ensemble fluctuations on several lateral length scales, X-ray diffraction reciprocal space maps have been analyzed. The data reveal a complicated varying materials composition across the sample and in the nanowires on the order of 20%. The use of modern synchrotron sources, where beam-sizes in the order of several 10 mu m are available, enables us to investigate compositional gradients along the sample by recording diffraction patterns at different positions. In addition, compositional variations were found also within single nanowires in X-ray energy dispersive spectroscopy measurements. (C) 2013 Elsevier B.V. All rights reserved.},
  author       = {Kriegner, D. and Persson, J. M. and Etzelstorfer, T. and Jacobsson, Daniel and Wallentin, Jesper and Wagner, J. B. and Deppert, Knut and Borgström, Magnus and Stangl, J.},
  issn         = {0040-6090},
  language     = {eng},
  pages        = {100--105},
  publisher    = {Elsevier},
  series       = {Thin Solid Films},
  title        = {Structural investigation of GaInP nanowires using X-ray diffraction},
  url          = {http://dx.doi.org/10.1016/j.tsf.2013.02.112},
  doi          = {10.1016/j.tsf.2013.02.112},
  volume       = {543},
  year         = {2013},
}