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Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Zou, Xianshao LU ; Li, Chuanshuai LU ; Su, Xiaojun LU ; Liu, Yuchen LU ; Finkelstein-Shapiro, Daniel LU ; Zhang, Wei LU and Yartsev, Arkady LU (2020) In ACS Applied Materials and Interfaces 12(25). p.28360-28367
Abstract

As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of... (More)

As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
charge trapping, GaAs, surface passivation, surface recombination velocity, time-resolved spectroscopy
in
ACS Applied Materials and Interfaces
volume
12
issue
25
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:32469493
  • scopus:85087110716
ISSN
1944-8244
DOI
10.1021/acsami.0c04892
language
English
LU publication?
yes
id
7970e872-4d65-48a4-8bc9-a98c68d8c4c2
date added to LUP
2020-07-07 12:14:06
date last changed
2020-10-27 02:35:08
@article{7970e872-4d65-48a4-8bc9-a98c68d8c4c2,
  abstract     = {<p>As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump-THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.</p>},
  author       = {Zou, Xianshao and Li, Chuanshuai and Su, Xiaojun and Liu, Yuchen and Finkelstein-Shapiro, Daniel and Zhang, Wei and Yartsev, Arkady},
  issn         = {1944-8244},
  language     = {eng},
  number       = {25},
  pages        = {28360--28367},
  publisher    = {The American Chemical Society (ACS)},
  series       = {ACS Applied Materials and Interfaces},
  title        = {Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation},
  url          = {http://dx.doi.org/10.1021/acsami.0c04892},
  doi          = {10.1021/acsami.0c04892},
  volume       = {12},
  year         = {2020},
}