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Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate

Chaudhary, Shilpi LU ; Head, Ashley LU ; Sanchez-de-Armas, Rocio; Tissot, Heloise; Olivieri, Giorgia; Bournel, Fabrice; Montelius, Lars LU ; Ye, Lei LU ; Rochet, Francois and Gallet, Jean-Jacques, et al. (2015) In Journal of Physical Chemistry C 119(33). p.19149-19161
Abstract
The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species... (More)
The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species assigned to a mixed titanium/silicon oxide is identified. Atomic force microscopy confirms the morphological changes after silicon oxide formation. (Less)
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publication status
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in
Journal of Physical Chemistry C
volume
119
issue
33
pages
19149 - 19161
publisher
The American Chemical Society
external identifiers
  • wos:000360026200035
  • scopus:84939864807
ISSN
1932-7447
DOI
10.1021/acs.jpcc.5b04985
language
English
LU publication?
yes
id
f40a8d63-8c9a-465d-a273-0e4a20c832db (old id 7972245)
date added to LUP
2015-09-23 09:21:52
date last changed
2017-02-05 03:15:18
@article{f40a8d63-8c9a-465d-a273-0e4a20c832db,
  abstract     = {The interaction of the ruffle TiO2(110) surface with tetraethyl orthosilicate (TEOS) in the pressure range from UHV to 1 mbar as well as the TEOS-based chemical vapor deposition of SiO2 on the TiO2(110) surface were monitored in real time using near-ambient pressure X-ray photoelectron spectroscopy. The experimental data and density functional theory calculations confirm the dissociative adsorption of TEOS on the surface already at room temperature. At elevated pressure, the ethoxy species formed in the adsorption process undergoes further surface reactions toward a carboxyl species not observed in the absence of a TEOS gas phase reservoir. Annealing of the adsorption layer leads to the formation of SiO2, and an intermediate oxygen species assigned to a mixed titanium/silicon oxide is identified. Atomic force microscopy confirms the morphological changes after silicon oxide formation.},
  author       = {Chaudhary, Shilpi and Head, Ashley and Sanchez-de-Armas, Rocio and Tissot, Heloise and Olivieri, Giorgia and Bournel, Fabrice and Montelius, Lars and Ye, Lei and Rochet, Francois and Gallet, Jean-Jacques and Brena, Barbara and Schnadt, Joachim},
  issn         = {1932-7447},
  language     = {eng},
  number       = {33},
  pages        = {19149--19161},
  publisher    = {The American Chemical Society},
  series       = {Journal of Physical Chemistry C},
  title        = {Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate},
  url          = {http://dx.doi.org/10.1021/acs.jpcc.5b04985},
  volume       = {119},
  year         = {2015},
}