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Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires

Kasama, T.; Thuvander, M.; Siusys, A.; Gontard, L. C.; Kovacs, A.; Yazdi, S.; Duchamp, M.; Gustafsson, Anders LU ; Dunin-Borkowski, R. E. and Sadowski, Janusz LU (2015) In Applied Physics Reviews 118(5).
Abstract
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are... (More)
Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC. (Less)
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organization
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type
Contribution to journal
publication status
published
subject
in
Applied Physics Reviews
volume
118
issue
5
publisher
American Institute of Physics
external identifiers
  • wos:000359376700026
  • scopus:84938633294
ISSN
0021-8979
DOI
10.1063/1.4927623
language
English
LU publication?
yes
id
82a555af-e3f7-4083-af46-c5d1cfe10278 (old id 7975871)
date added to LUP
2015-09-24 15:32:27
date last changed
2017-01-01 03:18:54
@article{82a555af-e3f7-4083-af46-c5d1cfe10278,
  abstract     = {Doping mechanisms of Mn in GaAs nanowires (NWs) that have been grown self-catalytically at 600 degrees C by molecular beam epitaxy (MBE) are investigated using advanced electron microscopy techniques and atom probe tomography, Mn is found to be incorporated primarily in the form of non-magnetic tetragonal Ga0.82Mn0.18 nanocrystals in Ga catalyst droplets at the ends of the NWs, while trace amounts of Mn (22 +/- 4 at. ppm) are also distributed randomly in the NW bodies without forming clusters or precipitates. The nanocrystals are likely to form after switching off the reaction in the MBE chamber, since they are partially embedded in neck regions of the NWs. The Ga0.82Mn0.18 nanocrystals and the low Mn concentration in the NW bodies are insufficient to induce a ferromagnetic phase transition, suggesting that it is difficult to have high Mn contents in GaAs even in 1-D NW growth via the vapor-liquid-solid process. (C) 2015 AIP Publishing LLC.},
  articleno    = {054302},
  author       = {Kasama, T. and Thuvander, M. and Siusys, A. and Gontard, L. C. and Kovacs, A. and Yazdi, S. and Duchamp, M. and Gustafsson, Anders and Dunin-Borkowski, R. E. and Sadowski, Janusz},
  issn         = {0021-8979},
  language     = {eng},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Reviews},
  title        = {Direct observation of doping incorporation pathways in self-catalytic GaMnAs nanowires},
  url          = {http://dx.doi.org/10.1063/1.4927623},
  volume       = {118},
  year         = {2015},
}