Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
(2006) In Applied Physics Letters 89(17).- Abstract
Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
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https://lup.lub.lu.se/record/7a70d168-24ff-48cc-a944-c79f48df4fef
- author
- Adell, M. LU ; Adell, J. LU ; Ilver, L. ; Kanski, J. and Sadowski, J. LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- in
- Applied Physics Letters
- volume
- 89
- issue
- 17
- article number
- 172509
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:33750481500
- ISSN
- 0003-6951
- DOI
- 10.1063/1.2364182
- language
- English
- LU publication?
- yes
- id
- 7a70d168-24ff-48cc-a944-c79f48df4fef
- date added to LUP
- 2016-05-03 15:40:00
- date last changed
- 2023-03-23 10:09:05
@article{7a70d168-24ff-48cc-a944-c79f48df4fef, abstract = {{<p>Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.</p>}}, author = {{Adell, M. and Adell, J. and Ilver, L. and Kanski, J. and Sadowski, J.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{17}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As}}, url = {{http://dx.doi.org/10.1063/1.2364182}}, doi = {{10.1063/1.2364182}}, volume = {{89}}, year = {{2006}}, }