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Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As

Adell, M. LU ; Adell, J. LU ; Ilver, L.; Kanski, J. and Sadowski, J. LU (2006) In Applied Physics Letters 89(17).
Abstract

Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers. © 2006 American Institute of Physics.

Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
in
Applied Physics Letters
volume
89
issue
17
publisher
American Institute of Physics
external identifiers
  • Scopus:33750481500
ISSN
0003-6951
DOI
10.1063/1.2364182
language
English
LU publication?
yes
id
7a70d168-24ff-48cc-a944-c79f48df4fef
date added to LUP
2016-05-03 15:40:00
date last changed
2017-02-02 10:25:51
@article{7a70d168-24ff-48cc-a944-c79f48df4fef,
  abstract     = {<p>Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers. © 2006 American Institute of Physics.</p>},
  articleno    = {172509},
  author       = {Adell, M. and Adell, J. and Ilver, L. and Kanski, J. and Sadowski, J.},
  issn         = {0003-6951},
  language     = {eng},
  number       = {17},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As},
  url          = {http://dx.doi.org/10.1063/1.2364182},
  volume       = {89},
  year         = {2006},
}