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Mass transport model for semiconductor nanowire growth

Johansson, Jonas LU orcid ; Svensson, CPT ; Mårtensson, Thomas LU ; Samuelson, Lars LU and Seifert, Werner LU (2005) In The Journal of Physical Chemistry Part B 109(28). p.13567-13571
Abstract
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
The Journal of Physical Chemistry Part B
volume
109
issue
28
pages
13567 - 13571
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000230526800024
  • scopus:23144456810
ISSN
1520-5207
DOI
10.1021/jp051702j
language
English
LU publication?
yes
id
7c8a6c24-2979-494a-a4df-933b69911e64 (old id 232303)
date added to LUP
2016-04-01 16:19:37
date last changed
2022-04-15 03:42:56
@article{7c8a6c24-2979-494a-a4df-933b69911e64,
  abstract     = {{We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.}},
  author       = {{Johansson, Jonas and Svensson, CPT and Mårtensson, Thomas and Samuelson, Lars and Seifert, Werner}},
  issn         = {{1520-5207}},
  language     = {{eng}},
  number       = {{28}},
  pages        = {{13567--13571}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{The Journal of Physical Chemistry Part B}},
  title        = {{Mass transport model for semiconductor nanowire growth}},
  url          = {{http://dx.doi.org/10.1021/jp051702j}},
  doi          = {{10.1021/jp051702j}},
  volume       = {{109}},
  year         = {{2005}},
}