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Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene

Sadowski, Janusz LU ; Dziawa, Piotr ; Kaleta, Anna ; Kurowska, Bogusława ; Reszka, Anna ; Story, Tomasz and Kret, Sławomir (2018) In Nanoscale 10(44). p.20772-20778
Abstract

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of... (More)

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of depositing a protective capping layer in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanoscale
volume
10
issue
44
pages
7 pages
publisher
Royal Society of Chemistry
external identifiers
  • scopus:85056639966
  • pmid:30402641
ISSN
2040-3364
DOI
10.1039/c8nr06096g
language
English
LU publication?
yes
id
7cc91aaa-fa29-40c4-94c9-3aab12bd74b4
date added to LUP
2018-11-27 08:08:12
date last changed
2021-09-22 04:35:01
@article{7cc91aaa-fa29-40c4-94c9-3aab12bd74b4,
  abstract     = {<p>SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have a cubic rock-salt structure, they grow along the [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with a Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Waals epitaxy mode induced when the catalyzing Au nanoparticles mix with Sn delivered from a SnTe flux, providing a liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out the necessity of depositing a protective capping layer in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.</p>},
  author       = {Sadowski, Janusz and Dziawa, Piotr and Kaleta, Anna and Kurowska, Bogusława and Reszka, Anna and Story, Tomasz and Kret, Sławomir},
  issn         = {2040-3364},
  language     = {eng},
  number       = {44},
  pages        = {20772--20778},
  publisher    = {Royal Society of Chemistry},
  series       = {Nanoscale},
  title        = {Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene},
  url          = {http://dx.doi.org/10.1039/c8nr06096g},
  doi          = {10.1039/c8nr06096g},
  volume       = {10},
  year         = {2018},
}