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Self-Limiting Polymer Exposure for Vertical Processing of Semiconductor Nanowire-Based Flexible Electronics

Zhang, Yuwei LU ; Hrachowina, Lukas LU ; Barrigon, Enrique LU ; Åberg, Ingvar and Borgström, Magnus LU orcid (2020) In ACS Applied Nano Materials 3(8). p.7743-7749
Abstract

In this work, we demonstrate a vertical processing method to fabricate nanowire (NW)-based devices. This method combines the strong light absorption ability caused by the NW geometry and exposure to dose-dependent clearance properties of a photo-sensitive polymer. By embedding NW arrays in a polymer, the NW light absorption leads to self-limited exposure and selective removal of the polymer. This optical and self-limited exposure pattern definition method can replace more expensive processing equipment, such as reactive ion etching and the use of a mask aligner. Excitingly, this method can be used to enable peel-off of NW arrays from their parent substrate, opening up opportunities to fabricate flexible NW array devices.

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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire, nanowire vertical device, peel-off, polymer processing, self-limiting exposure
in
ACS Applied Nano Materials
volume
3
issue
8
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85092268032
ISSN
2574-0970
DOI
10.1021/acsanm.0c01314
language
English
LU publication?
yes
id
7d90ecc4-9b16-4b93-acf6-ae82814e356a
date added to LUP
2020-11-04 06:56:02
date last changed
2025-10-14 12:39:49
@article{7d90ecc4-9b16-4b93-acf6-ae82814e356a,
  abstract     = {{<p>In this work, we demonstrate a vertical processing method to fabricate nanowire (NW)-based devices. This method combines the strong light absorption ability caused by the NW geometry and exposure to dose-dependent clearance properties of a photo-sensitive polymer. By embedding NW arrays in a polymer, the NW light absorption leads to self-limited exposure and selective removal of the polymer. This optical and self-limited exposure pattern definition method can replace more expensive processing equipment, such as reactive ion etching and the use of a mask aligner. Excitingly, this method can be used to enable peel-off of NW arrays from their parent substrate, opening up opportunities to fabricate flexible NW array devices. </p>}},
  author       = {{Zhang, Yuwei and Hrachowina, Lukas and Barrigon, Enrique and Åberg, Ingvar and Borgström, Magnus}},
  issn         = {{2574-0970}},
  keywords     = {{nanowire; nanowire vertical device; peel-off; polymer processing; self-limiting exposure}},
  language     = {{eng}},
  number       = {{8}},
  pages        = {{7743--7749}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Nano Materials}},
  title        = {{Self-Limiting Polymer Exposure for Vertical Processing of Semiconductor Nanowire-Based Flexible Electronics}},
  url          = {{http://dx.doi.org/10.1021/acsanm.0c01314}},
  doi          = {{10.1021/acsanm.0c01314}},
  volume       = {{3}},
  year         = {{2020}},
}