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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Thompson, Michael D ; Alhodaib, Aiyeshah ; Craig, Adam P ; Robson, Alex ; Aziz, Atif ; Krier, Anthony ; Svensson, Johannes LU ; Wernersson, Lars-Erik LU ; Sanchez, Ana M and Marshall, Andrew R J (2016) In Nano Letters 16(1). p.182-187
Abstract
Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.
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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
16
issue
1
pages
182 - 187
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:26675242
  • wos:000368322700029
  • scopus:84957605277
  • pmid:26675242
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b03449
language
English
LU publication?
yes
id
12295370-578d-4f1c-b94d-856c655fcbd5 (old id 8504511)
date added to LUP
2016-04-01 10:11:15
date last changed
2022-04-27 19:32:25
@article{12295370-578d-4f1c-b94d-856c655fcbd5,
  abstract     = {{Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.}},
  author       = {{Thompson, Michael D and Alhodaib, Aiyeshah and Craig, Adam P and Robson, Alex and Aziz, Atif and Krier, Anthony and Svensson, Johannes and Wernersson, Lars-Erik and Sanchez, Ana M and Marshall, Andrew R J}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{182--187}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.5b03449}},
  doi          = {{10.1021/acs.nanolett.5b03449}},
  volume       = {{16}},
  year         = {{2016}},
}