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A transmission line method for evaluation of vertical InAs nanowire contacts

Berg, Martin LU ; Svensson, Johannes LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2015) In Applied Physics Letters 107(23).
Abstract
In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific... (More)
In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific contact resistance values reaching down to below 1 Omega mu m(2). (C) 2015 AIP Publishing LLC. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
107
issue
23
publisher
American Institute of Physics
external identifiers
  • wos:000367010800025
  • scopus:84950154491
ISSN
0003-6951
DOI
10.1063/1.4937125
language
English
LU publication?
yes
id
0e74b29f-849b-4c3a-9086-87ee30c821a2 (old id 8545716)
date added to LUP
2016-01-29 11:31:16
date last changed
2017-08-13 03:26:02
@article{0e74b29f-849b-4c3a-9086-87ee30c821a2,
  abstract     = {In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific contact resistance values reaching down to below 1 Omega mu m(2). (C) 2015 AIP Publishing LLC.},
  articleno    = {232102},
  author       = {Berg, Martin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {23},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {A transmission line method for evaluation of vertical InAs nanowire contacts},
  url          = {http://dx.doi.org/10.1063/1.4937125},
  volume       = {107},
  year         = {2015},
}