A transmission line method for evaluation of vertical InAs nanowire contacts
Berg, Martin LU ; Svensson, Johannes LU ; Lind, Erik LU
and Wernersson, Lars-Erik
LU
(2015)
In Applied Physics Letters
107(23).
- Abstract
- In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific... (More)
- In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific contact resistance values reaching down to below 1 Omega mu m(2). (C) 2015 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/8545716
- author
- Berg, Martin
LU
; Svensson, Johannes
LU
; Lind, Erik
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 107
- issue
- 23
- article number
- 232102
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000367010800025
- scopus:84950154491
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4937125
- language
- English
- LU publication?
- yes
- id
- 0e74b29f-849b-4c3a-9086-87ee30c821a2 (old id 8545716)
- date added to LUP
- 2016-04-01 11:13:19
- date last changed
- 2025-04-04 14:45:53
@article{0e74b29f-849b-4c3a-9086-87ee30c821a2,
abstract = {{In this paper, we present a method for metal contact characterization to vertical semiconductor nanowires using the transmission line method (TLM) on a cylindrical geometry. InAs nanowire resistors are fabricated on Si substrates using a hydrogen silsesquioxane (HSQ) spacer between the bottom and top contact. The thickness of the HSQ is defined by the dose of an electron beam lithography step, and by varying the separation thickness for a group of resistors, a TLM series is fabricated. Using this method, the resistivity and specific contact resistance are determined for InAs nanowires with different doping and annealing conditions. The contacts are shown to improve with annealing at temperatures up to 300 degrees C for 1min, with specific contact resistance values reaching down to below 1 Omega mu m(2). (C) 2015 AIP Publishing LLC.}},
author = {{Berg, Martin and Svensson, Johannes and Lind, Erik and Wernersson, Lars-Erik}},
issn = {{0003-6951}},
language = {{eng}},
number = {{23}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{A transmission line method for evaluation of vertical InAs nanowire contacts}},
url = {{http://dx.doi.org/10.1063/1.4937125}},
doi = {{10.1063/1.4937125}},
volume = {{107}},
year = {{2015}},
}