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Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.

Nylund, Gustav LU ; Storm, Kristian LU ; Lehmann, Sebastian LU ; Capasso, Federico and Samuelson, Lars LU (2016) In Nano Letters
Abstract
III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles... (More)
III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
in
Nano Letters
publisher
The American Chemical Society
external identifiers
  • pmid:26788886
  • scopus:84958176964
  • wos:000370215200029
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b04067
language
English
LU publication?
yes
id
637414d8-f5de-423e-ba2f-97d233bba254 (old id 8576854)
date added to LUP
2016-02-11 22:02:07
date last changed
2017-05-21 04:08:47
@article{637414d8-f5de-423e-ba2f-97d233bba254,
  abstract     = {III-V semiconductor heterostructures are important components of many solid-state optoelectronic devices, but the ability to control and tune the electrical and optical properties of these structures in conventional device geometries is fundamentally limited by the bulk dimensionality and the inability to accommodate lattice-mismatched material combinations. Here we demonstrate how semiconductor nanowires may enable the creation of arbitrarily shaped one-dimensional potential structures for new types of designed device functionality. We describe the controlled growth of stepwise compositionally graded InAs1-xPx heterostructures defined along the axes of InAs nanowires, and we show that nanowires with sawtooth-shaped composition profiles behave as near-ideal unipolar diodes with ratchet-like rectification of the electron transport through the nanowires, in excellent agreement with simulations. This new type of designed quasi-1D potential structure represents a significant advance in band gap engineering and may enable fundamental studies of low-dimensional hot-carrier dynamics, in addition to constituting a platform for implementing novel electronic and optoelectronic device concepts.},
  author       = {Nylund, Gustav and Storm, Kristian and Lehmann, Sebastian and Capasso, Federico and Samuelson, Lars},
  issn         = {1530-6992},
  language     = {eng},
  month        = {01},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b04067},
  year         = {2016},
}