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Radial tunnel diodes based on InP/InGaAs core-shell nanowires

Tizno, Ofogh LU ; Ganjipour, Bahram LU ; Heurlin, Magnus LU ; Thelander, Claes LU ; Borgström, Magnus T. LU and Samuelson, Lars LU (2017) In Applied Physics Letters 110(11).
Abstract

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at... (More)

We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
110
issue
11
publisher
American Institute of Physics
external identifiers
  • scopus:85015092349
  • wos:000397871900035
ISSN
0003-6951
DOI
10.1063/1.4978271
language
English
LU publication?
yes
id
86dc018c-7c35-4a99-886a-63f10b467c83
date added to LUP
2017-03-23 08:57:57
date last changed
2018-01-07 11:56:47
@article{86dc018c-7c35-4a99-886a-63f10b467c83,
  abstract     = {<p>We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n<sup>+</sup>-p doping profile show normal diode rectification, whereas n<sup>+</sup>-p<sup>+</sup> junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm<sup>2</sup> and a reverse current density of 7.3 kA/cm<sup>2</sup> at V<sub>SD</sub> = −0.5 V are extracted at room temperature after normalization with the effective junction area.</p>},
  articleno    = {113501},
  author       = {Tizno, Ofogh and Ganjipour, Bahram and Heurlin, Magnus and Thelander, Claes and Borgström, Magnus T. and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  month        = {03},
  number       = {11},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Radial tunnel diodes based on InP/InGaAs core-shell nanowires},
  url          = {http://dx.doi.org/10.1063/1.4978271},
  volume       = {110},
  year         = {2017},
}