Independent Control of Nucleation and Layer Growth in Nanowires
Maliakkal, Carina B. LU ; Mårtensson, Erik K. LU ; Tornberg, Marcus Ulf LU ; Jacobsson, Daniel ; Persson, Axel R. LU
; Johansson, Jonas
LU
; Wallenberg, Lars Reine
LU
and Dick, Kimberly A.
LU
(2020)
In ACS Nano
14(4).
p.3868-3875
- Abstract
Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - can occur on similar time scales and can be controlled independently using different growth... (More)
Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions and will play a major role in determining material properties such as compositional uniformity, dopant density, and impurity incorporation. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet, and experimental parameters. The key insights discussed here are not restricted to Au-catalyzed GaAs nanowire growth but can be extended to most compound nanowire growths in which the different growth species has very different solubility in the catalyst particle.
(Less)
- author
- Maliakkal, Carina B.
LU
; Mårtensson, Erik K.
LU
; Tornberg, Marcus Ulf
LU
; Jacobsson, Daniel
; Persson, Axel R.
LU
; Johansson, Jonas
LU
; Wallenberg, Lars Reine
LU
and Dick, Kimberly A.
LU
- organization
- publishing date
- 2020-02-21
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Au-catalyzed, compound nanowires, GaAs nanowires, In situ TEM, incubation time before each layer
- in
- ACS Nano
- volume
- 14
- issue
- 4
- pages
- 8 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:32049491
- scopus:85080916345
- ISSN
- 1936-0851
- DOI
- 10.1021/acsnano.9b09816
- language
- English
- LU publication?
- yes
- id
- 87590261-bdf3-4b66-8ae0-559c536c8999
- date added to LUP
- 2020-03-20 14:27:36
- date last changed
- 2024-09-05 17:51:08
@article{87590261-bdf3-4b66-8ae0-559c536c8999,
abstract = {{<p>Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions and will play a major role in determining material properties such as compositional uniformity, dopant density, and impurity incorporation. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet, and experimental parameters. The key insights discussed here are not restricted to Au-catalyzed GaAs nanowire growth but can be extended to most compound nanowire growths in which the different growth species has very different solubility in the catalyst particle.</p>}},
author = {{Maliakkal, Carina B. and Mårtensson, Erik K. and Tornberg, Marcus Ulf and Jacobsson, Daniel and Persson, Axel R. and Johansson, Jonas and Wallenberg, Lars Reine and Dick, Kimberly A.}},
issn = {{1936-0851}},
keywords = {{Au-catalyzed; compound nanowires; GaAs nanowires; In situ TEM; incubation time before each layer}},
language = {{eng}},
month = {{02}},
number = {{4}},
pages = {{3868--3875}},
publisher = {{The American Chemical Society (ACS)}},
series = {{ACS Nano}},
title = {{Independent Control of Nucleation and Layer Growth in Nanowires}},
url = {{http://dx.doi.org/10.1021/acsnano.9b09816}},
doi = {{10.1021/acsnano.9b09816}},
volume = {{14}},
year = {{2020}},
}