Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
(2002) In Physical Review B (Condensed Matter and Materials Physics) 66(15).- Abstract
- The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/324105
- author
- Wagner, M ; Thinh, NQ ; Son, NT ; Chen, WM ; Janzen, E ; Baranov, PG ; Mokhov, EN ; Hallin, C and Lindström, Lennart LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 66
- issue
- 15
- article number
- 155214
- publisher
- American Physical Society
- external identifiers
-
- wos:000179080800079
- scopus:0038195883
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.66.155214
- language
- English
- LU publication?
- yes
- id
- 875e6d4b-7056-4826-9740-051cc7de7269 (old id 324105)
- date added to LUP
- 2016-04-01 16:10:39
- date last changed
- 2022-01-28 17:50:03
@article{875e6d4b-7056-4826-9740-051cc7de7269, abstract = {{The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.}}, author = {{Wagner, M and Thinh, NQ and Son, NT and Chen, WM and Janzen, E and Baranov, PG and Mokhov, EN and Hallin, C and Lindström, Lennart}}, issn = {{1098-0121}}, language = {{eng}}, number = {{15}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC}}, url = {{http://dx.doi.org/10.1103/PhysRevB.66.155214}}, doi = {{10.1103/PhysRevB.66.155214}}, volume = {{66}}, year = {{2002}}, }