Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
(2014) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 126(5). p.1121-1124- Abstract
- High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4960534
- author
- Levchenko, K. ; Andrearczyk, T. ; Domagala, J. Z. ; Wosinski, T. ; Figielski, T. and Sadowski, Janusz LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics
- volume
- 126
- issue
- 5
- pages
- 1121 - 1124
- publisher
- Institute of Physics, Polish Academy of Sciences
- external identifiers
-
- wos:000346069100020
- scopus:84916910576
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 8e930ea4-5c04-4a56-81cb-85ce61c37792 (old id 4960534)
- date added to LUP
- 2016-04-01 13:40:47
- date last changed
- 2022-03-31 14:53:41
@article{8e930ea4-5c04-4a56-81cb-85ce61c37792, abstract = {{High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers.}}, author = {{Levchenko, K. and Andrearczyk, T. and Domagala, J. Z. and Wosinski, T. and Figielski, T. and Sadowski, Janusz}}, issn = {{0587-4246}}, language = {{eng}}, number = {{5}}, pages = {{1121--1124}}, publisher = {{Institute of Physics, Polish Academy of Sciences}}, series = {{Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics}}, title = {{Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers}}, volume = {{126}}, year = {{2014}}, }