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Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section

Göransson, D. J.O. LU ; Heurlin, M. LU ; Dalelkhan, B. LU ; Abay, S. ; Messing, M. E. LU ; Maisi, V. F. LU ; Borgström, M. T. LU and Xu, H. Q. LU (2019) In Applied Physics Letters 114(5).
Abstract


We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO ... (More)


We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO
2
substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.

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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
114
issue
5
article number
053108
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85061257170
ISSN
0003-6951
DOI
10.1063/1.5084222
language
English
LU publication?
yes
id
8f2dfdc5-19f7-42a8-a55e-61808493cd2a
date added to LUP
2019-02-19 10:16:49
date last changed
2022-04-25 21:21:13
@article{8f2dfdc5-19f7-42a8-a55e-61808493cd2a,
  abstract     = {{<p><br>
                                                         We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO                             <br>
                            <sub>2</sub><br>
                                                          substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.                         <br>
                        </p>}},
  author       = {{Göransson, D. J.O. and Heurlin, M. and Dalelkhan, B. and Abay, S. and Messing, M. E. and Maisi, V. F. and Borgström, M. T. and Xu, H. Q.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{02}},
  number       = {{5}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section}},
  url          = {{http://dx.doi.org/10.1063/1.5084222}},
  doi          = {{10.1063/1.5084222}},
  volume       = {{114}},
  year         = {{2019}},
}