Advanced

Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section

Göransson, D. J.O. LU ; Heurlin, M. LU ; Dalelkhan, B. LU ; Abay, S.; Messing, M. E. LU ; Maisi, V. F. LU ; Borgström, M. T. LU and Xu, H. Q. LU (2019) In Applied Physics Letters 114(5).
Abstract


We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO ... (More)


We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO
2
substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.

(Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
114
issue
5
publisher
American Institute of Physics
external identifiers
  • scopus:85061257170
ISSN
0003-6951
DOI
10.1063/1.5084222
language
English
LU publication?
yes
id
8f2dfdc5-19f7-42a8-a55e-61808493cd2a
date added to LUP
2019-02-19 10:16:49
date last changed
2019-03-19 04:05:41
@article{8f2dfdc5-19f7-42a8-a55e-61808493cd2a,
  abstract     = {<p><br>
                                                         We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single quantum structures, which show the Coulomb blockade effect, over entire lengths of the nanowires. The core-shell nanowires are grown by a selective area growth technique via metal-organic vapor phase epitaxy. The as-grown core-shell nanowires are found to be of wurtzite crystals. The InP cores have a hexagonal cross section, while the InAs shells are grown preferentially on specific { 1 1 ¯ 00} facets, leading to the formation of the core-shell nanowires with an overall triangular cross section. The grown core-shell nanowires are transferred onto a Si/SiO                             <br>
                            <sub>2</sub><br>
                                                          substrate and then contacted by several narrow metal electrodes. Low-temperature transport measurements show the Coulomb-blockade effect. We analyze the measured gate capacitance and single electron charging energy of the devices and demonstrate that a quantum structure which shows the Coulomb blockade effect of a many-electron quantum dot is formed over the full length of a single core-shell nanowire and consists of the entire InAs shell in the nanowire.                         <br>
                        </p>},
  articleno    = {053108},
  author       = {Göransson, D. J.O. and Heurlin, M. and Dalelkhan, B. and Abay, S. and Messing, M. E. and Maisi, V. F. and Borgström, M. T. and Xu, H. Q.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {02},
  number       = {5},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Coulomb blockade from the shell of an InP-InAs core-shell nanowire with a triangular cross section},
  url          = {http://dx.doi.org/10.1063/1.5084222},
  volume       = {114},
  year         = {2019},
}