Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study
(2004) In Physical Review B (Condensed Matter and Materials Physics) 70(8).- Abstract
- We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/905444
- author
- Mikkelsen, Anders LU ; Sanyal, B ; Sadowski, Janusz LU ; Ouattara, Lassana LU ; Kanski, J ; Mirbt, S ; Eriksson, O and Lundgren, Edvin LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 70
- issue
- 8
- publisher
- American Physical Society
- external identifiers
-
- wos:000223716700085
- scopus:19544376314
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.70.085411
- language
- English
- LU publication?
- yes
- id
- 85abddbf-0e1e-4c48-8a15-8569c8a584c0 (old id 905444)
- date added to LUP
- 2016-04-01 16:20:04
- date last changed
- 2022-03-30 07:09:35
@article{85abddbf-0e1e-4c48-8a15-8569c8a584c0, abstract = {{We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.}}, author = {{Mikkelsen, Anders and Sanyal, B and Sadowski, Janusz and Ouattara, Lassana and Kanski, J and Mirbt, S and Eriksson, O and Lundgren, Edvin}}, issn = {{1098-0121}}, language = {{eng}}, number = {{8}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study}}, url = {{http://dx.doi.org/10.1103/PhysRevB.70.085411}}, doi = {{10.1103/PhysRevB.70.085411}}, volume = {{70}}, year = {{2004}}, }