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Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study

Mikkelsen, Anders LU ; Sanyal, B; Sadowski, Janusz LU ; Ouattara, Lassana LU ; Kanski, J; Mirbt, S; Eriksson, O and Lundgren, Edvin LU (2004) In Physical Review B (Condensed Matter and Materials Physics) 70(8).
Abstract
We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
70
issue
8
publisher
American Physical Society
external identifiers
  • wos:000223716700085
  • scopus:19544376314
ISSN
1098-0121
DOI
10.1103/PhysRevB.70.085411
language
English
LU publication?
yes
id
85abddbf-0e1e-4c48-8a15-8569c8a584c0 (old id 905444)
date added to LUP
2008-01-15 15:02:22
date last changed
2017-01-01 07:02:23
@article{85abddbf-0e1e-4c48-8a15-8569c8a584c0,
  abstract     = {We have studied the atomic scale structure of molecular beam epitaxy grown Ga1-xMnxAs compounds with various Mn concentrations by cross-sectional scanning tunneling microscopy and first principles calculations. Only bright protrusions close to the top layer As atoms are directly correlated with the bulk Mn concentration. Atomically resolved filled and empty states images of this defect are compared to images derived from first principles calculations. We identify the Mn related defect as substitutional Mn in the second layer Ga site. Surprisingly no substitutional Mn is observed in the top-most Ga layer. The experimental results are consistent with the energetics of our first principles total energy calculations.},
  author       = {Mikkelsen, Anders and Sanyal, B and Sadowski, Janusz and Ouattara, Lassana and Kanski, J and Mirbt, S and Eriksson, O and Lundgren, Edvin},
  issn         = {1098-0121},
  language     = {eng},
  number       = {8},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Defect structure of Ga1-xMnxAs: A cross-sectional scanning tunneling microscopy study},
  url          = {http://dx.doi.org/10.1103/PhysRevB.70.085411},
  volume       = {70},
  year         = {2004},
}