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Quantum-dot-induced ordering in GaxIn1-xP/InP islands

Håkanson, Ulf LU ; Sass, T; Johansson, Mikael LU ; Pistol, Mats-Erik LU and Samuelson, Lars LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(23).
Abstract
Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
23
publisher
American Physical Society
external identifiers
  • wos:000180279400075
  • scopus:0037115989
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.235308
language
English
LU publication?
yes
id
f7963528-23b3-4835-96ce-e89d081f27e1 (old id 909088)
date added to LUP
2008-01-22 10:38:01
date last changed
2017-01-01 07:03:51
@article{f7963528-23b3-4835-96ce-e89d081f27e1,
  abstract     = {Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.},
  articleno    = {235308},
  author       = {Håkanson, Ulf and Sass, T and Johansson, Mikael and Pistol, Mats-Erik and Samuelson, Lars},
  issn         = {1098-0121},
  language     = {eng},
  number       = {23},
  publisher    = {American Physical Society},
  series       = {Physical Review B (Condensed Matter and Materials Physics)},
  title        = {Quantum-dot-induced ordering in GaxIn1-xP/InP islands},
  url          = {http://dx.doi.org/10.1103/PhysRevB.66.235308},
  volume       = {66},
  year         = {2002},
}