Quantum-dot-induced ordering in GaxIn1-xP/InP islands
(2002) In Physical Review B (Condensed Matter and Materials Physics) 66(23).- Abstract
- Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/909088
- author
- Håkanson, Ulf LU ; Sass, T ; Johansson, Mikael LU ; Pistol, Mats-Erik LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 66
- issue
- 23
- article number
- 235308
- publisher
- American Physical Society
- external identifiers
-
- wos:000180279400075
- scopus:0037115989
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.66.235308
- language
- English
- LU publication?
- yes
- id
- f7963528-23b3-4835-96ce-e89d081f27e1 (old id 909088)
- date added to LUP
- 2016-04-01 16:23:10
- date last changed
- 2022-03-31 11:06:14
@article{f7963528-23b3-4835-96ce-e89d081f27e1, abstract = {{Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.}}, author = {{Håkanson, Ulf and Sass, T and Johansson, Mikael and Pistol, Mats-Erik and Samuelson, Lars}}, issn = {{1098-0121}}, language = {{eng}}, number = {{23}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Quantum-dot-induced ordering in GaxIn1-xP/InP islands}}, url = {{http://dx.doi.org/10.1103/PhysRevB.66.235308}}, doi = {{10.1103/PhysRevB.66.235308}}, volume = {{66}}, year = {{2002}}, }