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Quantum-dot-induced ordering in GaxIn1-xP/InP islands

Håkanson, Ulf LU ; Sass, T ; Johansson, Mikael LU ; Pistol, Mats-Erik LU and Samuelson, Lars LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(23).
Abstract
Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
23
article number
235308
publisher
American Physical Society
external identifiers
  • wos:000180279400075
  • scopus:0037115989
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.235308
language
English
LU publication?
yes
id
f7963528-23b3-4835-96ce-e89d081f27e1 (old id 909088)
date added to LUP
2016-04-01 16:23:10
date last changed
2022-03-31 11:06:14
@article{f7963528-23b3-4835-96ce-e89d081f27e1,
  abstract     = {{Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.}},
  author       = {{Håkanson, Ulf and Sass, T and Johansson, Mikael and Pistol, Mats-Erik and Samuelson, Lars}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{23}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Quantum-dot-induced ordering in GaxIn1-xP/InP islands}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.66.235308}},
  doi          = {{10.1103/PhysRevB.66.235308}},
  volume       = {{66}},
  year         = {{2002}},
}