Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires
(2011) In Nanotechnology 22(18).- Abstract
- We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary... (More)
- We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1925789
- author
- Boyd, Erin E. ; Storm, Kristian LU ; Samuelson, Lars LU and Westervelt, Robert M.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 22
- issue
- 18
- article number
- 185201
- publisher
- IOP Publishing
- external identifiers
-
- wos:000288653300002
- scopus:79953270296
- pmid:21427464
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/22/18/185201
- language
- English
- LU publication?
- yes
- id
- 91051872-eb47-4e53-9314-4c63ae271d30 (old id 1925789)
- date added to LUP
- 2016-04-01 10:27:03
- date last changed
- 2023-10-12 05:32:31
@article{91051872-eb47-4e53-9314-4c63ae271d30,
abstract = {{We use a scanning gate microscope (SGM) to characterize one-dimensional ultra-thin (diameter approximate to 30 nm) InAs/InP heterostructure nanowires containing a nominally 300 nm long InAs quantum dot defined by two InP tunnel barriers. Measurements of Coulomb blockade conductance versus backgate voltage with no tip present are difficult to decipher. Using the SGM tip as a charged movable gate, we are able to identify three quantum dots along the nanowire: the grown-in quantum dot and an additional quantum dot near each metal lead. The SGM conductance images are used to disentangle information about individual quantum dots and then to characterize each quantum dot using spatially resolved energy-level spectroscopy. S Online supplementary data available from stacks.iop.org/Nano/22/185201/mmedia}},
author = {{Boyd, Erin E. and Storm, Kristian and Samuelson, Lars and Westervelt, Robert M.}},
issn = {{0957-4484}},
language = {{eng}},
number = {{18}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires}},
url = {{http://dx.doi.org/10.1088/0957-4484/22/18/185201}},
doi = {{10.1088/0957-4484/22/18/185201}},
volume = {{22}},
year = {{2011}},
}