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Nanometer-scale two-terminal semiconductor memory operating at room temperature

Song, Aimin LU ; Missous, M; Omling, Pär LU ; Maximov, Ivan LU ; Seifert, Werner LU and Samuelson, Lars LU (2005) In Applied Physics Letters 86(4).
Abstract
Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
86
issue
4
publisher
American Institute of Physics
external identifiers
  • wos:000226761400037
  • scopus:13644278175
ISSN
0003-6951
DOI
10.1063/1.1852711
language
English
LU publication?
yes
id
165b10cc-db8a-4121-b447-a524fc7b3a93 (old id 912199)
date added to LUP
2008-01-21 10:52:04
date last changed
2017-07-23 03:51:34
@article{165b10cc-db8a-4121-b447-a524fc7b3a93,
  abstract     = {Based on a nanometer-scale semiconductor channel with an intentionally broken geometric symmetry, we have realized a type of memory device that consists of only two terminals, rather than the minimum of three terminals in conventional semiconductor memories. The charge retention time is at least 10 h at cryogenic temperatures and a few minutes at room temperature. Furthermore, the simplicity of the design allows the active part of the devices to be made in a single nanolithography step which, along with the planar structure of the device, provides promising possibilities for a high integration density. (C) 2005 American Institute of Physics.},
  articleno    = {042106},
  author       = {Song, Aimin and Missous, M and Omling, Pär and Maximov, Ivan and Seifert, Werner and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {4},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Nanometer-scale two-terminal semiconductor memory operating at room temperature},
  url          = {http://dx.doi.org/10.1063/1.1852711},
  volume       = {86},
  year         = {2005},
}