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Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

Vidarsson, A. M. ; Persson, A. R. ; Chen, J. T. LU ; Haasmann, D. ; Hassan, J. ; Dimitrijev, S. ; Rorsman, N. ; Darakchieva, V. LU and Sveinbjörnsson, E. (2024) 358. p.59-64
Abstract

Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V). A very fast interface trap, noted as NI, has been suggested to be the main culprit for poor inversion channel carrier mobility. The origin of the NI trap is unknown, but it is likely a property of the SiO2 and it is enhanced during post nitridation. In this study we show that the NI trap is also detected in 4H-SiC/AlN and 4H-SiC/Al2O3 MIS-capacitors. Observations are done using conductance spectroscopy and capacitance voltage measurements at cryogenic temperatures. This strongly suggests that the NI trap is a property of the SiC surface and not the dielectric used to form the... (More)

Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V). A very fast interface trap, noted as NI, has been suggested to be the main culprit for poor inversion channel carrier mobility. The origin of the NI trap is unknown, but it is likely a property of the SiO2 and it is enhanced during post nitridation. In this study we show that the NI trap is also detected in 4H-SiC/AlN and 4H-SiC/Al2O3 MIS-capacitors. Observations are done using conductance spectroscopy and capacitance voltage measurements at cryogenic temperatures. This strongly suggests that the NI trap is a property of the SiC surface and not the dielectric used to form the SiC/dielectric interface. Furthermore, a scanning transmission electron microscopy (STEM) was performed to confirm that there are no SiO2 layers or islands present at the 4H-SiC/AlN and 4H-SiC/Al2O3 interfaces.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Aluminium Nitride, Aluminium Oxide, Capacitance Voltage, Conductance Spectroscopy, Interface Characterization, Interface Traps, MOS Capacitor, Scanning Transmission Electron Microscopy, Silicon Carbide
host publication
Solid State Phenomena
volume
358
pages
6 pages
publisher
Trans Tech Publications
external identifiers
  • scopus:85204926083
DOI
10.4028/p-8gOXKi
language
English
LU publication?
yes
id
92f2b6af-316f-482e-9064-397f20258a0f
date added to LUP
2025-01-15 13:55:21
date last changed
2025-06-23 12:07:09
@inbook{92f2b6af-316f-482e-9064-397f20258a0f,
  abstract     = {{<p>Modest channel carrier mobility in SiC-MOSFETs with NO annealed gate oxides has been the main factor hampering development of low power devices (300 – 650 V). A very fast interface trap, noted as NI, has been suggested to be the main culprit for poor inversion channel carrier mobility. The origin of the NI trap is unknown, but it is likely a property of the SiO2 and it is enhanced during post nitridation. In this study we show that the NI trap is also detected in 4H-SiC/AlN and 4H-SiC/Al2O3 MIS-capacitors. Observations are done using conductance spectroscopy and capacitance voltage measurements at cryogenic temperatures. This strongly suggests that the NI trap is a property of the SiC surface and not the dielectric used to form the SiC/dielectric interface. Furthermore, a scanning transmission electron microscopy (STEM) was performed to confirm that there are no SiO2 layers or islands present at the 4H-SiC/AlN and 4H-SiC/Al2O3 interfaces.</p>}},
  author       = {{Vidarsson, A. M. and Persson, A. R. and Chen, J. T. and Haasmann, D. and Hassan, J. and Dimitrijev, S. and Rorsman, N. and Darakchieva, V. and Sveinbjörnsson, E.}},
  booktitle    = {{Solid State Phenomena}},
  keywords     = {{Aluminium Nitride; Aluminium Oxide; Capacitance Voltage; Conductance Spectroscopy; Interface Characterization; Interface Traps; MOS Capacitor; Scanning Transmission Electron Microscopy; Silicon Carbide}},
  language     = {{eng}},
  pages        = {{59--64}},
  publisher    = {{Trans Tech Publications}},
  title        = {{Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces}},
  url          = {{http://dx.doi.org/10.4028/p-8gOXKi}},
  doi          = {{10.4028/p-8gOXKi}},
  volume       = {{358}},
  year         = {{2024}},
}