Magnetotransport through nanoconstriction in ferromagnetic semiconductor (Ga,Mn)As
(2003) XXXII International School on Physics of Semiconducting Compounds 103(6). p.525-531- Abstract
- We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga, Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/304756
- author
- Figielski, T ; Wosinski, T ; Pelya, O ; Sadowski, Janusz LU ; Morawski, A ; Makosa, A ; Dobrowolski, W ; Jagielski, J and Wrobel, J
- organization
- publishing date
- 2003
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Acta Physica Polonica A ( Proceedings of the XXXII International School on Physics of Semiconducting Compounds, Part 1)
- volume
- 103
- issue
- 6
- pages
- 525 - 531
- publisher
- Polish Academy of Sciences
- conference name
- XXXII International School on Physics of Semiconducting Compounds
- conference location
- Jaszowiec, Poland
- conference dates
- 2003-05-30 - 2003-06-06
- external identifiers
-
- wos:000184649200003
- scopus:0043156333
- ISSN
- 0587-4246
- language
- English
- LU publication?
- yes
- id
- 93bca26c-39d5-4876-8236-3c73c26a727e (old id 304756)
- alternative location
- http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-525.html
- date added to LUP
- 2016-04-01 17:11:27
- date last changed
- 2022-01-29 01:00:54
@inproceedings{93bca26c-39d5-4876-8236-3c73c26a727e, abstract = {{We studied narrow (submicron) constrictions in the layers of ferromagnetic semiconductor (Ga, Mn)As. We have demonstrated a contribution of the quantum localization effects to the magnetoresistance of the constricted samples. We have also found a negative contribution of a domain wall trapped in the constriction to the resistance, due presumably to the erasing of the localization effects by the domain wall.}}, author = {{Figielski, T and Wosinski, T and Pelya, O and Sadowski, Janusz and Morawski, A and Makosa, A and Dobrowolski, W and Jagielski, J and Wrobel, J}}, booktitle = {{Acta Physica Polonica A ( Proceedings of the XXXII International School on Physics of Semiconducting Compounds, Part 1)}}, issn = {{0587-4246}}, language = {{eng}}, number = {{6}}, pages = {{525--531}}, publisher = {{Polish Academy of Sciences}}, title = {{Magnetotransport through nanoconstriction in ferromagnetic semiconductor (Ga,Mn)As}}, url = {{http://przyrbwn.icm.edu.pl/APP/ABSTR/103/a103-6-525.html}}, volume = {{103}}, year = {{2003}}, }