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Gate tunable parallel double quantum dots in InAs double-nanowire devices

Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K. LU ; Jeppesen, S. LU ; Samuelson, L. LU ; Xu, H. Q. LU and Tarucha, S. (2017) In Applied Physics Letters 111(23).
Abstract

We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires... (More)

We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
111
issue
23
publisher
American Institute of Physics
external identifiers
  • scopus:85038209496
  • wos:000418349100056
ISSN
0003-6951
DOI
10.1063/1.4997646
language
English
LU publication?
yes
id
9725d7aa-07f8-40dc-89a6-dbea2b2828f2
date added to LUP
2018-01-03 13:34:31
date last changed
2018-01-16 13:28:55
@article{9725d7aa-07f8-40dc-89a6-dbea2b2828f2,
  abstract     = {<p>We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.</p>},
  articleno    = {233513},
  author       = {Baba, S. and Matsuo, S. and Kamata, H. and Deacon, R. S. and Oiwa, A. and Li, K. and Jeppesen, S. and Samuelson, L. and Xu, H. Q. and Tarucha, S.},
  issn         = {0003-6951},
  language     = {eng},
  month        = {12},
  number       = {23},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Gate tunable parallel double quantum dots in InAs double-nanowire devices},
  url          = {http://dx.doi.org/10.1063/1.4997646},
  volume       = {111},
  year         = {2017},
}