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Trade-off effect of hydrogen-bonded dopant-free hole transport materials on performance of inverted perovskite solar cells

Wang, Zheng ; Zhang, Jiakang ; Rahman, Sunardi LU ; Kasi Matta, Sri ; Kanti Si, Mrinal ; Zhang, Zhenhao ; Zou, Muhua ; Wang, Hongzhen ; P. Russo, Salvy and Zhou, Zhongmin , et al. (2024) In Nano Energy 128.
Abstract
Benefiting from their ordered orientation and superior stability compared to traditional conjugated materials, hydrogen bonding (HB)-induced H-aggregates in organic small molecule hole-transport materials (HTMs) hold a big potential for high-performance inverted perovskite solar cells (IPSCs). However, H-aggregates can also lead to excessive face-aggregation by forming the gaps between aggregates, which is in turn unfavorable for charge mobility and thus for the overall device performance. Herein, we design and synthesize a new set of HB-containing triphenylamine-based small molecules to tailor the degree of H-aggregation, namely O1 (without HB), O2 (unilateral HB unit), and O3 (bilateral HB units). These HTMs make a clear trade-off effect... (More)
Benefiting from their ordered orientation and superior stability compared to traditional conjugated materials, hydrogen bonding (HB)-induced H-aggregates in organic small molecule hole-transport materials (HTMs) hold a big potential for high-performance inverted perovskite solar cells (IPSCs). However, H-aggregates can also lead to excessive face-aggregation by forming the gaps between aggregates, which is in turn unfavorable for charge mobility and thus for the overall device performance. Herein, we design and synthesize a new set of HB-containing triphenylamine-based small molecules to tailor the degree of H-aggregation, namely O1 (without HB), O2 (unilateral HB unit), and O3 (bilateral HB units). These HTMs make a clear trade-off effect on the charge mobility within the HTM and the interfacial properties of perovskite and HTM. Although the interfacial hole extraction process is promoted upon the HB-functionalized interface, the best performance of IPSCs is still achieved by O1 HTM, which is mainly influenced by the higher hole mobility without HB-induced H-aggregates. Nevertheless, the photo stability of as-fabricated devices is effectively improved upon the HB passivation effect on the interface of HTM (O2 or O3) and perovskite, as well as the better quality of atop perovskite layers with less grain boundary compared to the reference case (O1). (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Energy
volume
128
article number
109870
pages
10 pages
publisher
Elsevier
external identifiers
  • scopus:85195566771
ISSN
2211-2855
DOI
10.1016/j.nanoen.2024.109870
language
English
LU publication?
yes
additional info
Volume 128, Part A
id
9786ad19-5a8e-483c-9b2f-d03e2a6cf451
date added to LUP
2024-06-14 21:25:38
date last changed
2024-06-18 03:07:36
@article{9786ad19-5a8e-483c-9b2f-d03e2a6cf451,
  abstract     = {{Benefiting from their ordered orientation and superior stability compared to traditional conjugated materials, hydrogen bonding (HB)-induced H-aggregates in organic small molecule hole-transport materials (HTMs) hold a big potential for high-performance inverted perovskite solar cells (IPSCs). However, H-aggregates can also lead to excessive face-aggregation by forming the gaps between aggregates, which is in turn unfavorable for charge mobility and thus for the overall device performance. Herein, we design and synthesize a new set of HB-containing triphenylamine-based small molecules to tailor the degree of H-aggregation, namely O1 (without HB), O2 (unilateral HB unit), and O3 (bilateral HB units). These HTMs make a clear trade-off effect on the charge mobility within the HTM and the interfacial properties of perovskite and HTM. Although the interfacial hole extraction process is promoted upon the HB-functionalized interface, the best performance of IPSCs is still achieved by O1 HTM, which is mainly influenced by the higher hole mobility without HB-induced H-aggregates. Nevertheless, the photo stability of as-fabricated devices is effectively improved upon the HB passivation effect on the interface of HTM (O2 or O3) and perovskite, as well as the better quality of atop perovskite layers with less grain boundary compared to the reference case (O1).}},
  author       = {{Wang, Zheng and Zhang, Jiakang and Rahman, Sunardi and Kasi Matta, Sri and Kanti Si, Mrinal and Zhang, Zhenhao and Zou, Muhua and Wang, Hongzhen and P. Russo, Salvy and Zhou, Zhongmin and Zhang, Haichang and Liu, Maning}},
  issn         = {{2211-2855}},
  language     = {{eng}},
  month        = {{06}},
  publisher    = {{Elsevier}},
  series       = {{Nano Energy}},
  title        = {{Trade-off effect of hydrogen-bonded dopant-free hole transport materials on performance of inverted perovskite solar cells}},
  url          = {{http://dx.doi.org/10.1016/j.nanoen.2024.109870}},
  doi          = {{10.1016/j.nanoen.2024.109870}},
  volume       = {{128}},
  year         = {{2024}},
}