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Photoelectrical response of hybrid graphene-PbS quantum dot devices

Huang, Y. Q. ; Zhu, R. J. ; Kang, N. ; Du, J. and Xu, Hongqi LU (2013) In Applied Physics Letters 103(14).
Abstract
Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switched on and off on the quantum dots. The model that explains the observed photoresponse phenomenon is illustrated. We also show that the photoresponse signal, i.e., the photoinduced change in the resistance of the graphene channel can be tuned in both magnitude and sign with a voltage applied to the back gate of the devices and is related to the derivative of the transfer characteristics of the graphene channel. Our work shows that the simple hybrid... (More)
Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switched on and off on the quantum dots. The model that explains the observed photoresponse phenomenon is illustrated. We also show that the photoresponse signal, i.e., the photoinduced change in the resistance of the graphene channel can be tuned in both magnitude and sign with a voltage applied to the back gate of the devices and is related to the derivative of the transfer characteristics of the graphene channel. Our work shows that the simple hybrid graphene-PbS quantum dot devices can be employed for photodetection applications. (C) 2013 AIP Publishing LLC. (Less)
Please use this url to cite or link to this publication:
author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
103
issue
14
article number
143119
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000325488500103
  • scopus:84885648008
ISSN
0003-6951
DOI
10.1063/1.4824113
language
English
LU publication?
yes
id
9aea1c99-9902-4442-96ca-f99aae8643fe (old id 4166470)
date added to LUP
2016-04-01 11:17:21
date last changed
2022-01-26 06:52:27
@article{9aea1c99-9902-4442-96ca-f99aae8643fe,
  abstract     = {{Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switched on and off on the quantum dots. The model that explains the observed photoresponse phenomenon is illustrated. We also show that the photoresponse signal, i.e., the photoinduced change in the resistance of the graphene channel can be tuned in both magnitude and sign with a voltage applied to the back gate of the devices and is related to the derivative of the transfer characteristics of the graphene channel. Our work shows that the simple hybrid graphene-PbS quantum dot devices can be employed for photodetection applications. (C) 2013 AIP Publishing LLC.}},
  author       = {{Huang, Y. Q. and Zhu, R. J. and Kang, N. and Du, J. and Xu, Hongqi}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{14}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Photoelectrical response of hybrid graphene-PbS quantum dot devices}},
  url          = {{https://lup.lub.lu.se/search/files/2531857/4252442.pdf}},
  doi          = {{10.1063/1.4824113}},
  volume       = {{103}},
  year         = {{2013}},
}