Low power multi-band CMOS receiver front-end
Phansathitwong, Kittichai LU ; Sjöland, Henrik LU
and Andreani, Pietro
LU
(2010)
PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics
- Abstract
- A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well
below -10dB at all frequencies. The front-end draws... (More) - A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well
below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1670062
- author
- Phansathitwong, Kittichai
LU
; Sjöland, Henrik
LU
and Andreani, Pietro
LU
- organization
- publishing date
- 2010
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- capacitive crosscoupling, multi-band, LNA, mixer
- host publication
- [Host publication title missing]
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- PRIME 2010, 6th Conference on Ph.D. Research in Microelectronics & Electronics
- conference location
- Berlin, Germany
- conference dates
- 2010-07-18 - 2010-07-21
- external identifiers
-
- scopus:78049508944
- language
- English
- LU publication?
- yes
- id
- 9b71c41d-751b-401b-adcb-5ba44ccf17be (old id 1670062)
- date added to LUP
- 2016-04-04 12:02:31
- date last changed
- 2024-01-13 03:19:10
@inproceedings{9b71c41d-751b-401b-adcb-5ba44ccf17be,
abstract = {{A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with<br/><br>
capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in<br/><br>
16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP3) is above -14dBm. The input matching S11 is well<br/><br>
below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.}},
author = {{Phansathitwong, Kittichai and Sjöland, Henrik and Andreani, Pietro}},
booktitle = {{[Host publication title missing]}},
keywords = {{capacitive crosscoupling; multi-band; LNA; mixer}},
language = {{eng}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Low power multi-band CMOS receiver front-end}},
year = {{2010}},
}