Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
(2017) In Crystal Growth and Design 17(12). p.6297-6302- Abstract
We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.
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https://lup.lub.lu.se/record/9c846bae-d7cc-455f-b9e4-cd480ba431a1
- author
- Knoedler, Moritz ; Bologna, Nicolas ; Schmid, Heinz ; Borg, Mattias LU ; Moselund, Kirsten E. ; Wirths, Stephan ; Rossell, Marta D. and Riel, Heike
- organization
- publishing date
- 2017-01-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Crystal Growth and Design
- volume
- 17
- issue
- 12
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85044516952
- ISSN
- 1528-7483
- DOI
- 10.1021/acs.cgd.7b00983
- language
- English
- LU publication?
- yes
- id
- 9c846bae-d7cc-455f-b9e4-cd480ba431a1
- date added to LUP
- 2018-10-10 18:56:50
- date last changed
- 2022-03-17 18:04:14
@article{9c846bae-d7cc-455f-b9e4-cd480ba431a1, abstract = {{<p>We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO<sub>2</sub> templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.</p>}}, author = {{Knoedler, Moritz and Bologna, Nicolas and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E. and Wirths, Stephan and Rossell, Marta D. and Riel, Heike}}, issn = {{1528-7483}}, language = {{eng}}, month = {{01}}, number = {{12}}, pages = {{6297--6302}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Crystal Growth and Design}}, title = {{Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy}}, url = {{http://dx.doi.org/10.1021/acs.cgd.7b00983}}, doi = {{10.1021/acs.cgd.7b00983}}, volume = {{17}}, year = {{2017}}, }