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Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy

Knoedler, Moritz ; Bologna, Nicolas ; Schmid, Heinz ; Borg, Mattias LU orcid ; Moselund, Kirsten E. ; Wirths, Stephan ; Rossell, Marta D. and Riel, Heike (2017) In Crystal Growth and Design 17(12). p.6297-6302
Abstract

We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO2 templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.

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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth and Design
volume
17
issue
12
pages
6 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85044516952
ISSN
1528-7483
DOI
10.1021/acs.cgd.7b00983
language
English
LU publication?
yes
id
9c846bae-d7cc-455f-b9e4-cd480ba431a1
date added to LUP
2018-10-10 18:56:50
date last changed
2025-10-14 10:26:37
@article{9c846bae-d7cc-455f-b9e4-cd480ba431a1,
  abstract     = {{<p>We report on the structural characterization of GaAs nanowires integrated on Si(001) by template-assisted selective epitaxy. The nanowires were grown in lateral SiO<sub>2</sub> templates along [110] with varying V/III ratios and temperatures using metal-organic chemical vapor deposition. The nanowires have been categorized depending on the growth facets which typically consisted of (110) and (111)B planes. Nanowires exhibiting a (111)B growth facet were found to have high density planar defects for all growth conditions investigated. However, GaAs nanowires with a single (110) growth facet were grown without the formation of planar stacking faults, resulting in a pure zinc blende crystal.</p>}},
  author       = {{Knoedler, Moritz and Bologna, Nicolas and Schmid, Heinz and Borg, Mattias and Moselund, Kirsten E. and Wirths, Stephan and Rossell, Marta D. and Riel, Heike}},
  issn         = {{1528-7483}},
  language     = {{eng}},
  month        = {{01}},
  number       = {{12}},
  pages        = {{6297--6302}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Crystal Growth and Design}},
  title        = {{Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy}},
  url          = {{http://dx.doi.org/10.1021/acs.cgd.7b00983}},
  doi          = {{10.1021/acs.cgd.7b00983}},
  volume       = {{17}},
  year         = {{2017}},
}