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Magnetic domain engineering in antiferromagnetic CuMnAs and Mn 2 Au

Reimers, Sonka ; Gomonay, Olena ; Amin, Oliver J. ; Krizek, Filip ; Barton, Luke X. ; Lytvynenko, Yaryna ; Poole, Stuart F. ; Novák, Vit ; Campion, Richard P. and Maccherozzi, Francesco , et al. (2024) In Physical Review Applied 21(6).
Abstract

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or nonscalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic... (More)

Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or nonscalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the nontrivial interaction of magnetostriction, substrate clamping, and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will hopefully pave the way toward realizing truly functional antiferromagnetic devices.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Applied
volume
21
issue
6
article number
064030
publisher
American Physical Society
external identifiers
  • scopus:85196299809
ISSN
2331-7019
DOI
10.1103/PhysRevApplied.21.064030
language
English
LU publication?
yes
id
9d8af50e-a1a1-463f-9382-2f5a1b0ac006
date added to LUP
2024-08-19 14:30:21
date last changed
2024-08-19 14:31:48
@article{9d8af50e-a1a1-463f-9382-2f5a1b0ac006,
  abstract     = {{<p>Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or nonscalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the nontrivial interaction of magnetostriction, substrate clamping, and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will hopefully pave the way toward realizing truly functional antiferromagnetic devices.</p>}},
  author       = {{Reimers, Sonka and Gomonay, Olena and Amin, Oliver J. and Krizek, Filip and Barton, Luke X. and Lytvynenko, Yaryna and Poole, Stuart F. and Novák, Vit and Campion, Richard P. and Maccherozzi, Francesco and Carbone, Gerardina and Björling, Alexander and Niu, Yuran and Golias, Evangelos and Kriegner, Dominik and Sinova, Jairo and Kläui, Mathias and Jourdan, Martin and Dhesi, Sarnjeet S. and Edmonds, Kevin W. and Wadley, Peter}},
  issn         = {{2331-7019}},
  language     = {{eng}},
  number       = {{6}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Applied}},
  title        = {{Magnetic domain engineering in antiferromagnetic CuMnAs and Mn 2 Au}},
  url          = {{http://dx.doi.org/10.1103/PhysRevApplied.21.064030}},
  doi          = {{10.1103/PhysRevApplied.21.064030}},
  volume       = {{21}},
  year         = {{2024}},
}