In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth
(2019) In Nature Communications 10(1).- Abstract
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray... (More)
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux.
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- author
- Maliakkal, Carina B. LU ; Jacobsson, Daniel LU ; Tornberg, Marcus LU ; Persson, Axel R. LU ; Johansson, Jonas LU ; Wallenberg, Reine LU and Dick, Kimberly A. LU
- organization
- publishing date
- 2019-10-08
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nature Communications
- volume
- 10
- issue
- 1
- article number
- 4577
- publisher
- Nature Publishing Group
- external identifiers
-
- pmid:31594930
- scopus:85073056209
- ISSN
- 2041-1723
- DOI
- 10.1038/s41467-019-12437-6
- language
- English
- LU publication?
- yes
- id
- a21bda6c-e085-45a8-8c6b-6f0683cae899
- date added to LUP
- 2019-10-22 09:42:46
- date last changed
- 2024-09-04 10:15:53
@article{a21bda6c-e085-45a8-8c6b-6f0683cae899, abstract = {{<p>Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux.</p>}}, author = {{Maliakkal, Carina B. and Jacobsson, Daniel and Tornberg, Marcus and Persson, Axel R. and Johansson, Jonas and Wallenberg, Reine and Dick, Kimberly A.}}, issn = {{2041-1723}}, language = {{eng}}, month = {{10}}, number = {{1}}, publisher = {{Nature Publishing Group}}, series = {{Nature Communications}}, title = {{In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth}}, url = {{http://dx.doi.org/10.1038/s41467-019-12437-6}}, doi = {{10.1038/s41467-019-12437-6}}, volume = {{10}}, year = {{2019}}, }