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Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy

Mikkelsen, Anders LU ; Sköld, Niklas LU ; Ouattara, Lassana LU and Lundgren, Edvin LU (2006) In Nanotechnology 17(11). p.362-368
Abstract
Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in... (More)
Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in nanowires. We identify a carbon defect/dopant in the nanowire positioned on arsenic sites and establish quantitative limits on the defect density in the nanowires. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
17
issue
11
pages
362 - 368
publisher
IOP Publishing
external identifiers
  • wos:000238250300023
  • scopus:33744546661
ISSN
0957-4484
DOI
10.1088/0957-4484/17/11/S22
language
English
LU publication?
yes
id
a2fdc9b2-f36d-40c1-9a22-8d706dbb23a8 (old id 405915)
date added to LUP
2007-10-10 15:32:46
date last changed
2019-01-06 06:00:46
@article{a2fdc9b2-f36d-40c1-9a22-8d706dbb23a8,
  abstract     = {Using a crystalline embedding scheme it has recently become possible to study free-standing III - V nanowires with cross-sectional scanning tunnelling microscopy (XSTM). In the present paper we discuss how this novel method can be used for direct atomically resolved imaging of the interior of nanowires. We will focus in particular on two areas where this method provides unique possibilities. First we discuss the growth of the nanowire at the substrate as studied by XSTM and determine the facets of the nanowire growth on the surface and at the onset of free-standing nanowire growth. Second, we demonstrate how individual defects can be studied inside the wires, indicating a unique way for investigating dopant structures and concentrations in nanowires. We identify a carbon defect/dopant in the nanowire positioned on arsenic sites and establish quantitative limits on the defect density in the nanowires.},
  author       = {Mikkelsen, Anders and Sköld, Niklas and Ouattara, Lassana and Lundgren, Edvin},
  issn         = {0957-4484},
  language     = {eng},
  number       = {11},
  pages        = {362--368},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Nanowire growth and dopants studied by cross-sectional scanning tunnelling microscopy},
  url          = {http://dx.doi.org/10.1088/0957-4484/17/11/S22},
  volume       = {17},
  year         = {2006},
}