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Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production

Bogdanov, Alexei L. LU ; Holmqvist, Tommy LU ; Jedrasik, Piotr and Nilsson, Bengt LU (2003) In Microelectronic Engineering 67-68. p.381-389
Abstract

A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another 1-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist... (More)

A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another 1-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist was used.

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Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Electron beam, Lithography, Nanoimprint, Patterned media
in
Microelectronic Engineering
volume
67-68
pages
9 pages
publisher
Elsevier
external identifiers
  • scopus:0038359098
ISSN
0167-9317
DOI
10.1016/S0167-9317(03)00093-5
language
English
LU publication?
no
id
a33b46fc-37d1-4110-bc75-cb7470d70126
date added to LUP
2017-10-04 14:25:24
date last changed
2018-01-07 12:20:40
@article{a33b46fc-37d1-4110-bc75-cb7470d70126,
  abstract     = {<p>A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another 1-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist was used.</p>},
  author       = {Bogdanov, Alexei L. and Holmqvist, Tommy and Jedrasik, Piotr and Nilsson, Bengt},
  issn         = {0167-9317},
  keyword      = {Electron beam,Lithography,Nanoimprint,Patterned media},
  language     = {eng},
  pages        = {381--389},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production},
  url          = {http://dx.doi.org/10.1016/S0167-9317(03)00093-5},
  volume       = {67-68},
  year         = {2003},
}