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Optical properties of III-nitride semiconductors

Paskov, Plamen P. and Monemar, Bo LU (2017) p.87-116
Abstract

The optical properties of the group-III-nitride materials are obviously of direct relevance for optoelectronic applications, but experiments measuring optical properties also give information on a range of electronic properties. There is already a wealth of data in the literature on the optical properties of III-nitrides [1-4], and here we will concentrate on some of the most recent additions to the scientific knowledge. The focus, looking at the present situation concerning technical applications of these materials, has been on GaN, InGaN, and AlGaN in recent decades. AlGaN materials are important for ultraviolet (UV) emitters and high electron mobility transistor (HEMT) structures and AlGaN optical properties have accordingly been... (More)

The optical properties of the group-III-nitride materials are obviously of direct relevance for optoelectronic applications, but experiments measuring optical properties also give information on a range of electronic properties. There is already a wealth of data in the literature on the optical properties of III-nitrides [1-4], and here we will concentrate on some of the most recent additions to the scientific knowledge. The focus, looking at the present situation concerning technical applications of these materials, has been on GaN, InGaN, and AlGaN in recent decades. AlGaN materials are important for ultraviolet (UV) emitters and high electron mobility transistor (HEMT) structures and AlGaN optical properties have accordingly been studied over the entire Al composition range. InGaN materials (with In content <50%) have also been studied extensively, and the light-emitting diode (LED) applications based on InGaN/GaN quantum structures have already been awarded a Nobel Prize in 2014. However, the applications of InN are lagging behind. The development of growth procedures for InN and In-rich InGaN has been difficult, and their optical properties were consequently much less studied in the past.

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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
Handbook of GaN Semiconductor Materials and Devices
pages
30 pages
publisher
CRC Press
external identifiers
  • scopus:85054757065
ISBN
9781498747134
9781498747141
DOI
10.1201/9781315152011
language
English
LU publication?
yes
id
a49e27d2-8c5d-4ae3-a51f-1e3f8dd680f9
date added to LUP
2018-10-31 12:56:29
date last changed
2019-02-20 11:34:04
@inbook{a49e27d2-8c5d-4ae3-a51f-1e3f8dd680f9,
  abstract     = {<p>The optical properties of the group-III-nitride materials are obviously of direct relevance for optoelectronic applications, but experiments measuring optical properties also give information on a range of electronic properties. There is already a wealth of data in the literature on the optical properties of III-nitrides [1-4], and here we will concentrate on some of the most recent additions to the scientific knowledge. The focus, looking at the present situation concerning technical applications of these materials, has been on GaN, InGaN, and AlGaN in recent decades. AlGaN materials are important for ultraviolet (UV) emitters and high electron mobility transistor (HEMT) structures and AlGaN optical properties have accordingly been studied over the entire Al composition range. InGaN materials (with In content &lt;50%) have also been studied extensively, and the light-emitting diode (LED) applications based on InGaN/GaN quantum structures have already been awarded a Nobel Prize in 2014. However, the applications of InN are lagging behind. The development of growth procedures for InN and In-rich InGaN has been difficult, and their optical properties were consequently much less studied in the past.</p>},
  author       = {Paskov, Plamen P. and Monemar, Bo},
  isbn         = {9781498747134},
  language     = {eng},
  month        = {10},
  pages        = {87--116},
  publisher    = {CRC Press},
  title        = {Optical properties of III-nitride semiconductors},
  url          = {http://dx.doi.org/10.1201/9781315152011},
  year         = {2017},
}