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Electronic structure of (Ga,Mn)As revisited

Kanski, Janusz; Ilver, Lars; Karlsson, Krister; Ulfat, Intikhab LU ; Leandersson, Mats LU ; Sadowski, Janusz LU and Di Marco, I. (2017) In New Journal of Physics 19(2).
Abstract
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band versus impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above1%the band reaches the Fermi level, and can
thus host the delocalized holes needed for ferromagnetic... (More)
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band versus impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above1%the band reaches the Fermi level, and can
thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
dilute magnetic semiconductors, band structure, magnetic coupling
in
New Journal of Physics
volume
19
issue
2
pages
8 pages
publisher
IOP Publishing Ltd.
external identifiers
  • scopus:85014392815
  • wos:000405916900002
ISSN
1367-2630
DOI
10.1088/1367-2630/aa5a42
language
English
LU publication?
yes
id
a67cbbeb-41a4-4041-be51-03456ffd84e5
date added to LUP
2017-02-03 14:34:49
date last changed
2018-01-07 11:48:07
@article{a67cbbeb-41a4-4041-be51-03456ffd84e5,
  abstract     = {The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band versus impurity band carriers. Using angle resolved photoemission we show that the electronic structure of the (Ga,Mn)As system is significantly modified from that of GaAs throughout the valence band. Close to the Fermi energy, the presence of Mn induces a strong mixing of the bulk bands of GaAs, which results in the appearance of a highly dispersive band in the gap region of GaAs. For Mn concentrations above1%the band reaches the Fermi level, and can<br/>thus host the delocalized holes needed for ferromagnetic coupling. Overall, our data provide a firm evidence of delocalized carriers belonging to the modified host valence band.},
  articleno    = {023006},
  author       = {Kanski, Janusz and Ilver, Lars and Karlsson, Krister and Ulfat, Intikhab and Leandersson, Mats and Sadowski, Janusz and Di Marco, I.},
  issn         = {1367-2630},
  keyword      = {dilute magnetic semiconductors, band structure, magnetic coupling},
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {8},
  publisher    = {IOP Publishing Ltd.},
  series       = {New Journal of Physics},
  title        = {Electronic structure of (Ga,Mn)As revisited},
  url          = {http://dx.doi.org/10.1088/1367-2630/aa5a42},
  volume       = {19},
  year         = {2017},
}