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In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires

Hu, Tianyi LU ; Cao, Yuanyuan LU ; Franzén, Sara M. LU ; Jacobsson, Daniel LU orcid ; Seifner, Michael S. LU orcid ; Messing, Maria E. LU and Dick, Kimberly A. LU (2024) In Advanced Materials Interfaces
Abstract

Vapor–solid–solid (VSS) growth of III-V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep-level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle-NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed... (More)

Vapor–solid–solid (VSS) growth of III-V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep-level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle-NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni2Ga3 phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni2P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.

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; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
epub
subject
keywords
cation exchange reaction, GaP nanowires, in situ TEM, Ni nanoparticles, phase transformation, vapor–solid–solid mechanism
in
Advanced Materials Interfaces
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85208236998
ISSN
2196-7350
DOI
10.1002/admi.202400805
language
English
LU publication?
yes
id
a6ac4a4f-d6ba-48e9-be24-95fee3c480e8
date added to LUP
2024-12-11 12:02:36
date last changed
2025-04-04 15:17:38
@article{a6ac4a4f-d6ba-48e9-be24-95fee3c480e8,
  abstract     = {{<p>Vapor–solid–solid (VSS) growth of III-V semiconductor nanowires (NWs) has long been considered an alternative for the vapor–liquid–solid (VLS) growth mode, with the potential to avoid the incorporation of deep-level impurities into semiconductors and to form compositionally abrupt interfaces. Most research however indicates that VSS growth has a much lower growth rate than observed in the VLS growth regime, explained by the very slow mass transport at the solid seed particle-NW interface. In this study, the direct observation of the VSS growth of GaP NWs under different mechanisms is reported, by using Ni as a seed material inside an environmental transmission electron microscope. These results reveal that when NWs are grown from seed particles exhibiting the NiGa and Ni<sub>2</sub>Ga<sub>3</sub> phases, classic VSS growth occurs with slow NW growth and interface diffusion as the dominant mass transport pathway. In contrast, when NWs are grown by seed particles containing Ni<sub>2</sub>P phase, rapid NW growth is observed together with a continuous reshaping of the seed particle. A cation exchange reaction is proposed as the predominant growth mechanism. This research results demonstrate an entirely new variant of the VSS growth mode, opening up new degrees of freedom for tuning NW properties.</p>}},
  author       = {{Hu, Tianyi and Cao, Yuanyuan and Franzén, Sara M. and Jacobsson, Daniel and Seifner, Michael S. and Messing, Maria E. and Dick, Kimberly A.}},
  issn         = {{2196-7350}},
  keywords     = {{cation exchange reaction; GaP nanowires; in situ TEM; Ni nanoparticles; phase transformation; vapor–solid–solid mechanism}},
  language     = {{eng}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Advanced Materials Interfaces}},
  title        = {{In Situ Manipulation of Growth Mechanisms in the Vapor–Solid–Solid Growth of GaP Nanowires}},
  url          = {{http://dx.doi.org/10.1002/admi.202400805}},
  doi          = {{10.1002/admi.202400805}},
  year         = {{2024}},
}