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Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Khanbabaee, B.; Bussone, G.; Knutsson, J. V. LU ; Geijselaers, I. LU ; Pryor, C. E.; Rieger, T.; Demarina, N.; Grützmacher, D.; Lepsa, M. I. and Timm, R. LU , et al. (2016) In Journal of Applied Physics 120(14).
Abstract

Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the As-oxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about -0.3 eV for core/shell... (More)

Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the As-oxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about -0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell.

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Journal of Applied Physics
volume
120
issue
14
publisher
American Institute of Physics
external identifiers
  • scopus:84991670451
  • wos:000386535400073
ISSN
0021-8979
DOI
10.1063/1.4964600
language
English
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yes
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a81185bc-d315-42f0-b583-9436f67561dc
date added to LUP
2016-11-15 14:31:52
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2017-01-01 08:39:40
@article{a81185bc-d315-42f0-b583-9436f67561dc,
  abstract     = {<p>Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the As-oxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about -0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell.</p>},
  articleno    = {145703},
  author       = {Khanbabaee, B. and Bussone, G. and Knutsson, J. V. and Geijselaers, I. and Pryor, C. E. and Rieger, T. and Demarina, N. and Grützmacher, D. and Lepsa, M. I. and Timm, R. and Pietsch, U.},
  issn         = {0021-8979},
  language     = {eng},
  month        = {10},
  number       = {14},
  publisher    = {American Institute of Physics},
  series       = {Journal of Applied Physics},
  title        = {Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy},
  url          = {http://dx.doi.org/10.1063/1.4964600},
  volume       = {120},
  year         = {2016},
}