Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)- Abstract
- Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/611524
- author
- Håkanson, Ulf LU ; Johansson, M.K.-J. ; Holm, Magnus LU ; Persson, Jonas LU ; Sass, T. ; Pistol, Mats-Erik LU ; Montelius, Lars LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- single quantum dots, Photon mapping, scanning tunneling microscopy, luminescence spectroscopy, self-assembled InP quantum dots, optical properties, surface morphology, strain induced energy-shift, increasing cap layer thickness, STML spectra, dot emission, photon maps, transmission electron microscopy, GaInP, photoluminescence
- host publication
- 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
- pages
- 2 pages
- publisher
- Lund University
- conference name
- Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- conference location
- Malmö, Sweden
- conference dates
- 2002-06-24 - 2002-06-28
- language
- English
- LU publication?
- yes
- id
- b141255a-e131-4052-9df3-cfc30f203b70 (old id 611524)
- date added to LUP
- 2016-04-04 09:53:07
- date last changed
- 2018-11-21 20:55:32
@inproceedings{b141255a-e131-4052-9df3-cfc30f203b70, abstract = {{Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual self-assembled InP quantum dots overgrown with GaInP. We will present results correlating the surface morphology with the optical properties of single dots. In particular, the strain induced energy-shift of the dot emission with increasing cap layer thickness and its relation to the overgrowth will be discussed. Effects of the dots on the properties of the overgrown GaInP will also be treated. STML spectra and monochromatic photon maps are compared with results from photoluminescence and transmission electron microscopy measurements. Furthermore, a comparison with theoretical calculations is made}}, author = {{Håkanson, Ulf and Johansson, M.K.-J. and Holm, Magnus and Persson, Jonas and Sass, T. and Pistol, Mats-Erik and Montelius, Lars and Samuelson, Lars}}, booktitle = {{7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science}}, keywords = {{single quantum dots; Photon mapping; scanning tunneling microscopy; luminescence spectroscopy; self-assembled InP quantum dots; optical properties; surface morphology; strain induced energy-shift; increasing cap layer thickness; STML spectra; dot emission; photon maps; transmission electron microscopy; GaInP; photoluminescence}}, language = {{eng}}, publisher = {{Lund University}}, title = {{Photon mapping of single quantum dots by scanning tunneling microscopy induced luminescence spectroscopy}}, year = {{2002}}, }