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Core-level shifts on the H2O exposed Ge(100)2×1 surface

Larsson, Christer LU ; Flodström, Anders ; Karlsson, Ulf and Yang, Yi-xin (1989) In Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films 7(3). p.2044-2048
Abstract
Core-level spectroscopy and valence-band photoelectron spectroscopy were used to study the Ge(100)2×1 surface dosed with 0.5–100 L H2O at 160 K. It is determined that H2O adsorbs molecularly at 160 K and forms ice. The H2O molecules dissociate into H and OH radicals on the Ge(100)2×1 surface when the sample is heated to 300 K. A simple adsorption model that accounts for the calculated H and OH coverages is proposed.
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author
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type
Contribution to journal
publication status
published
subject
keywords
MEDIUM TEMPERATURE, LOW TEMPERATURE, PHOTOELECTRON SPECTROSCOPY, CHEMISORPTION, ICE, WATER, SURFACE STRUCTURE, GERMANIUM, SURFACE REACTIONS, ELECTRON DIFFRACTION
in
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films
volume
7
issue
3
pages
2044 - 2048
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:84957285694
ISSN
1520-8559
DOI
10.1116/1.575967
language
English
LU publication?
no
id
b1e486bb-6511-449a-9a8a-16690c31d8fb (old id 1056630)
date added to LUP
2016-04-01 12:10:51
date last changed
2025-10-14 12:31:36
@article{b1e486bb-6511-449a-9a8a-16690c31d8fb,
  abstract     = {{Core-level spectroscopy and valence-band photoelectron spectroscopy were used to study the Ge(100)2×1 surface dosed with 0.5–100 L H2O at 160 K. It is determined that H2O adsorbs molecularly at 160 K and forms ice. The H2O molecules dissociate into H and OH radicals on the Ge(100)2×1 surface when the sample is heated to 300 K. A simple adsorption model that accounts for the calculated H and OH coverages is proposed.}},
  author       = {{Larsson, Christer and Flodström, Anders and Karlsson, Ulf and Yang, Yi-xin}},
  issn         = {{1520-8559}},
  keywords     = {{MEDIUM TEMPERATURE; LOW TEMPERATURE; PHOTOELECTRON SPECTROSCOPY; CHEMISORPTION; ICE; WATER; SURFACE STRUCTURE; GERMANIUM; SURFACE REACTIONS; ELECTRON DIFFRACTION}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{2044--2048}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films}},
  title        = {{Core-level shifts on the H2O exposed Ge(100)2×1 surface}},
  url          = {{http://dx.doi.org/10.1116/1.575967}},
  doi          = {{10.1116/1.575967}},
  volume       = {{7}},
  year         = {{1989}},
}