Variation of strain in granular GaAs:MnAs layers
(2013) In Crystallography Reports 58(7). p.998-1001- Abstract
- Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4258935
- author
- Bak-Misiuk, J. ; Romanowski, P. ; Dynowska, E. ; Sadowski, Janusz LU ; Misiuk, A. and Caliebe, W.
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Crystallography Reports
- volume
- 58
- issue
- 7
- pages
- 998 - 1001
- publisher
- MAIK Nauka/Interperiodica
- external identifiers
-
- wos:000329101900009
- scopus:84891700207
- ISSN
- 1063-7745
- DOI
- 10.1134/S1063774513070043
- language
- English
- LU publication?
- yes
- id
- b4c74a1a-48cb-4e3b-9982-2429d21eaf6a (old id 4258935)
- date added to LUP
- 2016-04-01 14:35:29
- date last changed
- 2022-01-28 01:24:59
@article{b4c74a1a-48cb-4e3b-9982-2429d21eaf6a, abstract = {{Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500A degrees C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.}}, author = {{Bak-Misiuk, J. and Romanowski, P. and Dynowska, E. and Sadowski, Janusz and Misiuk, A. and Caliebe, W.}}, issn = {{1063-7745}}, language = {{eng}}, number = {{7}}, pages = {{998--1001}}, publisher = {{MAIK Nauka/Interperiodica}}, series = {{Crystallography Reports}}, title = {{Variation of strain in granular GaAs:MnAs layers}}, url = {{http://dx.doi.org/10.1134/S1063774513070043}}, doi = {{10.1134/S1063774513070043}}, volume = {{58}}, year = {{2013}}, }