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A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP

Sun, Jie LU ; Wallin, Daniel LU ; Maximov, Ivan LU and Xu, Hongqi LU (2008) In IEEE Electron Device Letters 29(6). p.540-542
Abstract
In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
three-terminal ballistic, nanoelectronics, set-reset (SR) latch, junction (TBJ)
in
IEEE Electron Device Letters
volume
29
issue
6
pages
540 - 542
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000256189000002
  • scopus:44849137062
ISSN
0741-3106
DOI
10.1109/LED.2008.922983
language
English
LU publication?
yes
id
b5ccfe70-05b5-4e77-baae-22a5467ba5be (old id 1202036)
date added to LUP
2016-04-01 14:13:59
date last changed
2022-01-27 23:34:17
@article{b5ccfe70-05b5-4e77-baae-22a5467ba5be,
  abstract     = {{In this letter, a novel sequential logic device based on three-terminal ballistic junctions (TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally integrated in a high-electron-mobility InGaAs/InP quantum-well material by a single-step lithography process. Electrical measurements reveal that the integrated device functions as a set-reset (SR) latch with voltage gains at room temperature. The demonstrated device provides a new and simple circuit design for SR latches in digital electronics.}},
  author       = {{Sun, Jie and Wallin, Daniel and Maximov, Ivan and Xu, Hongqi}},
  issn         = {{0741-3106}},
  keywords     = {{three-terminal ballistic; nanoelectronics; set-reset (SR) latch; junction (TBJ)}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{540--542}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP}},
  url          = {{http://dx.doi.org/10.1109/LED.2008.922983}},
  doi          = {{10.1109/LED.2008.922983}},
  volume       = {{29}},
  year         = {{2008}},
}