Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures
(2008) 4th MAG-EL-MAT Members Meeting 2006 26(4). p.1097-1104- Abstract
- Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing... (More)
- Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1376040
- author
- Wosinski, T. ; Figielski, T. ; Morawski, A. ; Makosa, A. ; Szymczak, R. ; Wrobel, J. and Sadowski, Janusz LU
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- nanostructure, ferromagnetic semiconductor, magnetoresistance, domain wall
- host publication
- Materials Sceince - Poland
- volume
- 26
- issue
- 4
- pages
- 1097 - 1104
- publisher
- Oficyny Wydawniczej Politechniki Wrocławskiej
- conference name
- 4th MAG-EL-MAT Members Meeting 2006
- conference dates
- 2006-05-03 - 2006-05-06
- external identifiers
-
- wos:000262458900042
- scopus:58149459146
- ISSN
- 2083-134X
- 0137-1339
- language
- English
- LU publication?
- yes
- id
- b8a99a39-4c91-488b-b32d-a0ecb5026a71 (old id 1376040)
- date added to LUP
- 2016-04-01 12:04:09
- date last changed
- 2024-01-08 07:12:37
@inproceedings{b8a99a39-4c91-488b-b32d-a0ecb5026a71,
abstract = {{Magneto-resistive nanostructures have been investigated. The structures were fabricated by electron beam lithography patterning and chemical etching from thin epitaxial layers of the ferromagnetic semiconductor (Ga,Mn)As, in shape of three nanowires joined in one point and forming three-terminal devices, in which an electric current can be driven through any of the three pairs of nanowires. In these devices, a novel magneto-resistive memory effect has been demonstrated, related to a rearrangement of magnetic domain walls between different pairs of nanowires in the device consisting in that its zero-field resistance depends on the direction of previously applied magnetic field. The nanostructures can thus work as two-state devices providing basic elements of nonvolatile memory cells.}},
author = {{Wosinski, T. and Figielski, T. and Morawski, A. and Makosa, A. and Szymczak, R. and Wrobel, J. and Sadowski, Janusz}},
booktitle = {{Materials Sceince - Poland}},
issn = {{2083-134X}},
keywords = {{nanostructure; ferromagnetic semiconductor; magnetoresistance; domain wall}},
language = {{eng}},
number = {{4}},
pages = {{1097--1104}},
publisher = {{Oficyny Wydawniczej Politechniki Wrocławskiej}},
title = {{Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures}},
volume = {{26}},
year = {{2008}},
}