III-V semiconductor nanowires for future devices
(2014) 17th Design, Automation and Test in Europe, DATE 2014- Abstract
The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with... (More)
The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high Ion with high Ion/Ioff ratio.
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- author
- Schmid, Heinz ; Borg, Mattias LU ; Moselund, K. ; Das Kanungo, P. ; Signorello, G. ; Karg, S. ; Mensch, P. ; Schmidt, V. and Riel, H.
- publishing date
- 2014
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Esaki diodes, III-V semiconductors, nanowires, Tunnel FETs
- host publication
- Proceedings -Design, Automation and Test in Europe, DATE
- article number
- 6800448
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 17th Design, Automation and Test in Europe, DATE 2014
- conference location
- Dresden, Germany
- conference dates
- 2014-03-24 - 2014-03-28
- external identifiers
-
- scopus:84903826882
- ISBN
- 9783981537024
- DOI
- 10.7873/DATE2014.247
- language
- English
- LU publication?
- no
- id
- b9221b7e-3b61-44db-9f2a-775e70f48612
- date added to LUP
- 2016-04-20 10:34:07
- date last changed
- 2022-01-30 02:49:44
@inproceedings{b9221b7e-3b61-44db-9f2a-775e70f48612, abstract = {{<p>The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled doping profiles and sharp heterojunctions essential for future device applications. We experimentally demonstrate vertical tunnel diodes and gate-all-around tunnel FETs based on InAs-Si nanowire heterojunctions. The results indicate the benefits of the InAs-Si material system combining the possibility of achieving high I<sub>on</sub> with high I<sub>on</sub>/I<sub>off</sub> ratio.</p>}}, author = {{Schmid, Heinz and Borg, Mattias and Moselund, K. and Das Kanungo, P. and Signorello, G. and Karg, S. and Mensch, P. and Schmidt, V. and Riel, H.}}, booktitle = {{Proceedings -Design, Automation and Test in Europe, DATE}}, isbn = {{9783981537024}}, keywords = {{Esaki diodes; III-V semiconductors; nanowires; Tunnel FETs}}, language = {{eng}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{III-V semiconductor nanowires for future devices}}, url = {{http://dx.doi.org/10.7873/DATE2014.247}}, doi = {{10.7873/DATE2014.247}}, year = {{2014}}, }