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Quantum transport in an ambipolar InSb nanowire quantum dot device

Deng, Mingtang LU ; Yu, Chunlin LU ; Huang, Guangyao LU ; Caroff, Philippe LU and Xu, Hongqi LU (2025) In Physical Review B 111(11).
Abstract

Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires, facilitating smooth transitions between the electron-transport region and the hole-transport region. In this paper, we demonstrate quantum transport measurements obtained from a high-quality InSb nanowire quantum dot device. By utilizing a back gate, this device can be adjusted from an electron-populated quantum dot regime to a hole-populated one. Within both regimes, we have observed dozens of consecutive quantum levels without any charge rearrangement or impurity-induced interruptions. Our... (More)

Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires, facilitating smooth transitions between the electron-transport region and the hole-transport region. In this paper, we demonstrate quantum transport measurements obtained from a high-quality InSb nanowire quantum dot device. By utilizing a back gate, this device can be adjusted from an electron-populated quantum dot regime to a hole-populated one. Within both regimes, we have observed dozens of consecutive quantum levels without any charge rearrangement or impurity-induced interruptions. Our investigations in the electron-transport regime have explored phenomena such as the Coulomb blockade effect, Zeeman effect, and Kondo effect. Meanwhile, in the hole-transport regime, we have identified conductance peaks induced by lead states. Particularly, we have created a tomographic analysis method of these lead states by tracking the behavior of these conductance peaks across consecutive Coulomb diamond structures.

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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
111
issue
11
article number
115409
publisher
American Physical Society
external identifiers
  • scopus:86000541641
ISSN
2469-9950
DOI
10.1103/PhysRevB.111.115409
language
English
LU publication?
yes
id
bcf61ffb-4bb4-4001-b010-ab18c2591c0d
date added to LUP
2025-06-11 13:58:15
date last changed
2025-06-11 13:59:34
@article{bcf61ffb-4bb4-4001-b010-ab18c2591c0d,
  abstract     = {{<p>Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires, facilitating smooth transitions between the electron-transport region and the hole-transport region. In this paper, we demonstrate quantum transport measurements obtained from a high-quality InSb nanowire quantum dot device. By utilizing a back gate, this device can be adjusted from an electron-populated quantum dot regime to a hole-populated one. Within both regimes, we have observed dozens of consecutive quantum levels without any charge rearrangement or impurity-induced interruptions. Our investigations in the electron-transport regime have explored phenomena such as the Coulomb blockade effect, Zeeman effect, and Kondo effect. Meanwhile, in the hole-transport regime, we have identified conductance peaks induced by lead states. Particularly, we have created a tomographic analysis method of these lead states by tracking the behavior of these conductance peaks across consecutive Coulomb diamond structures.</p>}},
  author       = {{Deng, Mingtang and Yu, Chunlin and Huang, Guangyao and Caroff, Philippe and Xu, Hongqi}},
  issn         = {{2469-9950}},
  language     = {{eng}},
  number       = {{11}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B}},
  title        = {{Quantum transport in an ambipolar InSb nanowire quantum dot device}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.111.115409}},
  doi          = {{10.1103/PhysRevB.111.115409}},
  volume       = {{111}},
  year         = {{2025}},
}