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Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions

Shorubalko, Ivan LU ; Xu, Hongqi LU ; Omling, Pär LU and Samuelson, Lars LU (2003) In Applied Physics Letters 83(12). p.2369-2371
Abstract
The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
83
issue
12
pages
2369 - 2371
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000185333200023
  • scopus:0142121702
ISSN
0003-6951
DOI
10.1063/1.1605822
language
English
LU publication?
yes
id
be051d59-78b8-48d2-a249-9488f101926a (old id 301477)
date added to LUP
2016-04-01 12:24:25
date last changed
2022-04-05 21:55:02
@article{be051d59-78b8-48d2-a249-9488f101926a,
  abstract     = {{The current-voltage (I-V) characteristics of three-terminal ballistic junctions (TBJs) fabricated from high-electron-mobility GaInAs/InP quantum-well structures are measured in the six-terminal configuration. These characteristics show strong nonlinear, diode-like behavior, in agreement with recent theoretical calculations. Furthermore, the I-V characteristics are tunable by the voltage applied directly to one branch of the TBJs acting as a gate. An additional tuning of the characteristics of the TBJ devices can be performed using an in-plane side gate. All the presented characteristics are measured at room temperature, which makes TBJ devices promising for future nanoelectronic applications. (C) 2003 American Institute of Physics.}},
  author       = {{Shorubalko, Ivan and Xu, Hongqi and Omling, Pär and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{12}},
  pages        = {{2369--2371}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Tunable nonlinear current-voltage characteristics of three-terminal ballistic nanojunctions}},
  url          = {{http://dx.doi.org/10.1063/1.1605822}},
  doi          = {{10.1063/1.1605822}},
  volume       = {{83}},
  year         = {{2003}},
}