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Mg-doping and free-hole properties of hot-wall MOCVD GaN

Papamichail, A. ; Kakanakova-Georgieva, A. ; Sveinbjörnsson, E. ; Persson, A. R. ; Hult, B. ; Rorsman, N. ; Stanishev, V. ; Le, S. P. ; Persson, P. O.Å. and Nawaz, M. , et al. (2022) In Journal of Applied Physics 131(18).
Abstract

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray... (More)

The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 ω cm and 8.4 × 10 17 cm - 3, respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures.

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type
Contribution to journal
publication status
published
subject
in
Journal of Applied Physics
volume
131
issue
18
article number
185704
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85130269676
ISSN
0021-8979
DOI
10.1063/5.0089406
language
English
LU publication?
yes
id
bffdf7f6-e713-4816-9f81-6c31b5b73b3d
date added to LUP
2022-09-02 15:21:22
date last changed
2023-11-20 09:20:30
@article{bffdf7f6-e713-4816-9f81-6c31b5b73b3d,
  abstract     = {{<p>The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range (2.45 × 10 18 cm-3 up to 1.10 × 10 20 cm-3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance-voltage (C-V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art p-GaN layers with a low resistivity and a high free-hole density (0.77 ω cm and 8.4 × 10 17 cm - 3, respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures. </p>}},
  author       = {{Papamichail, A. and Kakanakova-Georgieva, A. and Sveinbjörnsson, E. and Persson, A. R. and Hult, B. and Rorsman, N. and Stanishev, V. and Le, S. P. and Persson, P. O.Å. and Nawaz, M. and Chen, J. T. and Paskov, P. P. and Darakchieva, V.}},
  issn         = {{0021-8979}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{18}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Journal of Applied Physics}},
  title        = {{Mg-doping and free-hole properties of hot-wall MOCVD GaN}},
  url          = {{http://dx.doi.org/10.1063/5.0089406}},
  doi          = {{10.1063/5.0089406}},
  volume       = {{131}},
  year         = {{2022}},
}